JPS6467970A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS6467970A JPS6467970A JP22577187A JP22577187A JPS6467970A JP S6467970 A JPS6467970 A JP S6467970A JP 22577187 A JP22577187 A JP 22577187A JP 22577187 A JP22577187 A JP 22577187A JP S6467970 A JPS6467970 A JP S6467970A
- Authority
- JP
- Japan
- Prior art keywords
- source
- drain electrodes
- active layer
- thin film
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To obtain a thin film transistor in which no step is generated on an active layer and which has excellent electric characteristics by forming the active layer on a substrate and forming a gate insulating film, and source, drain electrodes thereon. CONSTITUTION:An active layer 3 is formed on an insulating substrate 1, and a gate insulating film 4, a gate electrode G, ohmic contact layers 2s, 2d, source, drain electrodes S, D are formed thereon. That is, the gate electrode G and the source, drain electrodes S, D are disposed on the same sides with respect to the layer 3. Thus, no step is formed not only on the layer 3 but on the film 4, the electrode G. As a result, the concentration of an electric field due to the step, the increase in a leakage current, a reduction in an ON current, the concentration of a stress, a reduction in a stability, etc., do not occur.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22577187A JPS6467970A (en) | 1987-09-08 | 1987-09-08 | Thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22577187A JPS6467970A (en) | 1987-09-08 | 1987-09-08 | Thin film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6467970A true JPS6467970A (en) | 1989-03-14 |
Family
ID=16834538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22577187A Pending JPS6467970A (en) | 1987-09-08 | 1987-09-08 | Thin film transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6467970A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208476A (en) * | 1990-06-08 | 1993-05-04 | Seiko Epson Corporation | Low leakage current offset-gate thin film transistor structure |
WO2001075981A1 (en) * | 2000-04-04 | 2001-10-11 | Matsushita Electric Industrial Co.,Ltd. | Thin-film semiconductor device and method for manufacturing the same |
JP2007141974A (en) * | 2005-11-15 | 2007-06-07 | Kobe Steel Ltd | Diamond semiconductor element and manufacturing method thereof |
EP2369371A2 (en) | 2010-03-10 | 2011-09-28 | Fujifilm Corporation | Wafer lens array and method for manufacturing the same |
-
1987
- 1987-09-08 JP JP22577187A patent/JPS6467970A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208476A (en) * | 1990-06-08 | 1993-05-04 | Seiko Epson Corporation | Low leakage current offset-gate thin film transistor structure |
WO2001075981A1 (en) * | 2000-04-04 | 2001-10-11 | Matsushita Electric Industrial Co.,Ltd. | Thin-film semiconductor device and method for manufacturing the same |
JP2007141974A (en) * | 2005-11-15 | 2007-06-07 | Kobe Steel Ltd | Diamond semiconductor element and manufacturing method thereof |
EP2369371A2 (en) | 2010-03-10 | 2011-09-28 | Fujifilm Corporation | Wafer lens array and method for manufacturing the same |
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