JPS5713768A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5713768A
JPS5713768A JP8776580A JP8776580A JPS5713768A JP S5713768 A JPS5713768 A JP S5713768A JP 8776580 A JP8776580 A JP 8776580A JP 8776580 A JP8776580 A JP 8776580A JP S5713768 A JPS5713768 A JP S5713768A
Authority
JP
Japan
Prior art keywords
drain
insulating film
electrode
sides
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8776580A
Other languages
Japanese (ja)
Inventor
Masamizu Konaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8776580A priority Critical patent/JPS5713768A/en
Publication of JPS5713768A publication Critical patent/JPS5713768A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the rise of unsaturated type characteristics of an IGFET by forming an electrode connected to a source or drain electrode at least one of the sides of the gate insulating film of the IGFET. CONSTITUTION:A conductive layer 6 is formed at least one (the drain side of this case) of the sides of a gate insulating film 4 (gate electrode 5) formed on a semiconductor substrate having a source region 3 and a drain region 2, and is connected to the drain electrode. Since the potential of the sides of the insulating film 4 of the drain region side is maintained equal to the drain potential in this manner, the rise of the drain current of the unsaturated type characteristics is presented at the low drain voltage side, and the FET can be operated with low power source.
JP8776580A 1980-06-30 1980-06-30 Insulated gate type field effect transistor Pending JPS5713768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8776580A JPS5713768A (en) 1980-06-30 1980-06-30 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8776580A JPS5713768A (en) 1980-06-30 1980-06-30 Insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5713768A true JPS5713768A (en) 1982-01-23

Family

ID=13924050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8776580A Pending JPS5713768A (en) 1980-06-30 1980-06-30 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5713768A (en)

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