KR0120542B1 - Semiconductor device and method thereof - Google Patents

Semiconductor device and method thereof

Info

Publication number
KR0120542B1
KR0120542B1 KR93018130A KR930018130A KR0120542B1 KR 0120542 B1 KR0120542 B1 KR 0120542B1 KR 93018130 A KR93018130 A KR 93018130A KR 930018130 A KR930018130 A KR 930018130A KR 0120542 B1 KR0120542 B1 KR 0120542B1
Authority
KR
South Korea
Prior art keywords
conductive layer
semiconductor device
shaped groove
insulator
channel region
Prior art date
Application number
KR93018130A
Other languages
Korean (ko)
Other versions
KR950010096A (en
Inventor
Hun-Jong Shin
Original Assignee
Samsung Electronics Co Ld
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ld filed Critical Samsung Electronics Co Ld
Priority to KR93018130A priority Critical patent/KR0120542B1/en
Publication of KR950010096A publication Critical patent/KR950010096A/en
Application granted granted Critical
Publication of KR0120542B1 publication Critical patent/KR0120542B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Abstract

A semiconductor device and method thereof having small physical structure is provided to improve the electrical properties. The semiconductor device comprises: a first insulator(2) having U-shaped groove formed on a semiconductor substrate(1); a first conductive layer(3) used as a gate electrode formed on the U-shaped groove; a second insulator(4) used as a gate insulator formed on the first conductive layer(3); a second conductive layer(5) of T-shaped structure filled with the U-shaped groove; a channel region formed in the second conductive layer(5); and a source/drain regions formed at both sides of the channel region. Thereby, it is possible to reduce leakage current of transistor and achieve high ON current by increasing channel width.
KR93018130A 1993-09-09 1993-09-09 Semiconductor device and method thereof KR0120542B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93018130A KR0120542B1 (en) 1993-09-09 1993-09-09 Semiconductor device and method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93018130A KR0120542B1 (en) 1993-09-09 1993-09-09 Semiconductor device and method thereof

Publications (2)

Publication Number Publication Date
KR950010096A KR950010096A (en) 1995-04-26
KR0120542B1 true KR0120542B1 (en) 1997-10-27

Family

ID=19363231

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93018130A KR0120542B1 (en) 1993-09-09 1993-09-09 Semiconductor device and method thereof

Country Status (1)

Country Link
KR (1) KR0120542B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737790B2 (en) * 1998-05-19 2004-05-18 Canon Kabushiki Kaisha Image forming apparatus having a heat insulating member
CN112951830B (en) * 2021-02-01 2023-02-07 泉芯集成电路制造(济南)有限公司 Integrated circuit device, memory, and electronic apparatus

Also Published As

Publication number Publication date
KR950010096A (en) 1995-04-26

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