JPS57176781A - Superconductive device - Google Patents

Superconductive device

Info

Publication number
JPS57176781A
JPS57176781A JP56060820A JP6082081A JPS57176781A JP S57176781 A JPS57176781 A JP S57176781A JP 56060820 A JP56060820 A JP 56060820A JP 6082081 A JP6082081 A JP 6082081A JP S57176781 A JPS57176781 A JP S57176781A
Authority
JP
Japan
Prior art keywords
superconductive
drain
source
gate electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56060820A
Other languages
Japanese (ja)
Inventor
Seiji Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56060820A priority Critical patent/JPS57176781A/en
Publication of JPS57176781A publication Critical patent/JPS57176781A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures

Abstract

PURPOSE:To form a superconductive device which is characterized by the stable operation with respect to a heat cycle and a switching function having very excellent performance can be executed, by controlling the voltage which is applied to a gate electrode having an MOS type structure. CONSTITUTION:On the part of a semiconductor substrate 10 between a source 11 and a drain 12, a gate electrode 14 is formed through a gate oxide film 13. On the source 11, the drain 12, and the gate electrode 14, an insulating film 15 and take out electrodes 16 are formed. In the superconductive device 18 constituted in this way, electrons are induced in a gate channel 17 when a positive voltage is applied on the gate, and the superconductive regions of the source 11 and the drain 12 are connected by surface superconductive region. As a result, by controlling the voltage value which is applied to the gate electrode 14, the part between both take out electrodes 16 which are connected by the source 11 and the drain 12 is set to the superconductive state or the normal conductive state. Therefor the switching function having the high performance can be executed.
JP56060820A 1981-04-22 1981-04-22 Superconductive device Pending JPS57176781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56060820A JPS57176781A (en) 1981-04-22 1981-04-22 Superconductive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56060820A JPS57176781A (en) 1981-04-22 1981-04-22 Superconductive device

Publications (1)

Publication Number Publication Date
JPS57176781A true JPS57176781A (en) 1982-10-30

Family

ID=13153363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56060820A Pending JPS57176781A (en) 1981-04-22 1981-04-22 Superconductive device

Country Status (1)

Country Link
JP (1) JPS57176781A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142580A (en) * 1983-12-28 1985-07-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Transistor device
JPS61201467A (en) * 1985-03-04 1986-09-06 Hitachi Ltd Superconducting transistor integrated circuit
JPS61242082A (en) * 1985-04-19 1986-10-28 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element
EP0257474A2 (en) * 1986-08-13 1988-03-02 Hitachi, Ltd. Superconducting device
JPS63219180A (en) * 1987-03-09 1988-09-12 Nippon Telegr & Teleph Corp <Ntt> Manufacture of superconducting transistor
EP0371426A2 (en) * 1988-11-28 1990-06-06 Hitachi, Ltd. Superconducting device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142580A (en) * 1983-12-28 1985-07-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Transistor device
US4647954A (en) * 1983-12-28 1987-03-03 International Business Machines Corporation Low temperature tunneling transistor
JPH0234194B2 (en) * 1983-12-28 1990-08-01 Intaanashonaru Bijinesu Mashiinzu Corp
JPS61201467A (en) * 1985-03-04 1986-09-06 Hitachi Ltd Superconducting transistor integrated circuit
JPS61242082A (en) * 1985-04-19 1986-10-28 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element
EP0257474A2 (en) * 1986-08-13 1988-03-02 Hitachi, Ltd. Superconducting device
JPS63219180A (en) * 1987-03-09 1988-09-12 Nippon Telegr & Teleph Corp <Ntt> Manufacture of superconducting transistor
EP0371426A2 (en) * 1988-11-28 1990-06-06 Hitachi, Ltd. Superconducting device

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