KR910019251A - Flash control device using the device in parallel with the semiconductor device and its manufacturing method - Google Patents

Abstract

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Description

Flash control device using the device in parallel with the semiconductor device and its manufacturing method

Since this is an open matter, no full text was included.

1 is a cross-sectional structural view showing one embodiment of a semiconductor device according to the present invention, FIG. 2 is a circuit diagram showing an equivalent circuit thereof, and FIGS. 3 and 4 show another embodiment of the semiconductor device according to the present invention. Sectional structure diagram.

Claims (4)

On the surface of the first semiconductor layer of the first conductivity type having the first and second principal surfaces, the second semiconductor layer of the second conductivity type formed on the first main surface of the first semiconductor layer, and the second semiconductor layer. A first semiconductor region of a first conductivity type having a relatively low first impurity concentration selectively formed, and a second high impurity concentration selectively formed on the surface of the second semiconductor layer adjacent to the first semiconductor region A second semiconductor region of a first conductivity type, a third semiconductor region of a second conductivity type having at least a portion of the surface of the first semiconductor region, and selectively separated from the first semiconductor region on the surface of the second semiconductor region And a fourth semiconductor region of the second conductive type, wherein a surface portion between the third and fourth semiconductor regions is defined as a channel, and a gate insulating film formed on the channel and the gate insulating film. And a first electrode formed over the second and fourth semiconductor regions, and a second main electrode formed on the second main surface of the first semiconductor layer. The concentration is set to a value at which the first semiconductor region is completely depleted in a state in which a real voltage is applied between the first and second main electrodes when the concentration is off, and the second impurity concentration is a threshold voltage of the channel. A semiconductor device which is set to a value which becomes a predetermined value of the resultant segment mode. Preparing a first semiconductor layer of a first conductivity type having a first and a second main surface; forming a second semiconductor layer of a second conductivity type on a first main surface of the first semiconductor layer; and Selectively forming a first semiconductor region of a first conductivity type having a relatively low first impurity concentration on the surface of the second semiconductor layer, and relatively high on the surface of the second semiconductor layer adjacent to the first semiconductor region Selectively forming a second semiconductor region of the first conductive layer having a second impurity concentration, forming a third semiconductor region of the second conductivity type in at least a portion of the surface of the first semiconductor region, and Selectively forming a fourth semiconductor region of a second conductivity type on a surface of the second semiconductor region, wherein the surface portion between the third and fourth semiconductor regions is a channel; Forming a gate insulating film on said channel, forming a gate electrode on said gate insulating film, forming a first main electrode over said second and fourth semiconductor regions, and And again forming a second main electrode on the second main surface, wherein the first impurity concentration is in a state where an actual voltage is applied between the first and second main electrodes. And wherein the first impurity concentration is set to a value at which the first semiconductor region is completely depleted, and the second impurity concentration is set to a value of a segment mode due to the threshold voltage of the channel. An iron ore energy measurement capacitor connected between the first and second high voltage power terminals, the first and second high voltage power terminals, a sharp discharge tube and a switch element connected between the first and second high voltage power terminals; And a trigger circuit connected to the sharpening discharge circuit and triggering the sharpening discharge tube upon the start of the sharpening discharge, wherein the switch element comprises a cascode-connected thyristor element and MOSFET with Flash control device formed in the. The flash control device according to claim 3, wherein the semiconductor device according to claim 1 is used as the switch element. ※ Note: The disclosure is based on the initial application.