SE8005703L - DIELECTRICALLY ISOLATED SEMICONDUCTOR SWITCH - Google Patents

DIELECTRICALLY ISOLATED SEMICONDUCTOR SWITCH

Info

Publication number
SE8005703L
SE8005703L SE8005703A SE8005703A SE8005703L SE 8005703 L SE8005703 L SE 8005703L SE 8005703 A SE8005703 A SE 8005703A SE 8005703 A SE8005703 A SE 8005703A SE 8005703 L SE8005703 L SE 8005703L
Authority
SE
Sweden
Prior art keywords
type
region
semiconductor body
cathode
semiconductor switch
Prior art date
Application number
SE8005703A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE446139B (en
Inventor
J E Berthold
A R Hartman
Rae A U Mac
T J Riley
P W Shackle
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE8005703L publication Critical patent/SE8005703L/en
Publication of SE446139B publication Critical patent/SE446139B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A high voltage solide-state switch, which allows alternating current or direct current operation and provides bidirectional blocking, consists of a first p-type semiconductor body (16) separated from a semiconductor substrate (12) by a dielectric layer (14) with a p+ type anode region (18), an n+ type cathode region (24) and an n+ type gate region (20) located on a common major surface of the semiconductor body. A second p type region (22) of higher impurity concentration than the semiconductor body encircles the cathode region. Separate low resistance electrical contacts are made to the anode, cathode, and gate regions.
SE8005703A 1978-12-20 1980-08-13 DIELECTRICALLY ISOLATED SEMICONDUCTOR SWITCH INTENDED FOR HIGH VOLTAGE SE446139B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97202278A 1978-12-20 1978-12-20
US97205678A 1978-12-20 1978-12-20
US97202178A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
SE8005703L true SE8005703L (en) 1980-08-13
SE446139B SE446139B (en) 1986-08-11

Family

ID=27420763

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8005703A SE446139B (en) 1978-12-20 1980-08-13 DIELECTRICALLY ISOLATED SEMICONDUCTOR SWITCH INTENDED FOR HIGH VOLTAGE

Country Status (18)

Country Link
JP (1) JPS6412106B2 (en)
KR (1) KR830002293B1 (en)
AU (1) AU529702B2 (en)
CH (1) CH659151A5 (en)
DD (1) DD147897A5 (en)
ES (1) ES487066A1 (en)
FR (1) FR2445026A1 (en)
GB (1) GB2049283B (en)
HU (1) HU181030B (en)
IE (1) IE48892B1 (en)
IL (1) IL58970A (en)
IN (1) IN153497B (en)
IT (1) IT1126603B (en)
NL (1) NL7920184A (en)
PL (1) PL220494A1 (en)
SE (1) SE446139B (en)
SG (1) SG32884G (en)
WO (1) WO1980001337A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
EP0075589B1 (en) * 1981-03-27 1987-01-14 Western Electric Company, Incorporated Gated diode switch
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (en) * 1966-12-19 1968-11-22 Lucas Industries Ltd Semiconductor diode
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
JPS4933432B1 (en) * 1968-12-20 1974-09-06
DE2102103A1 (en) * 1970-01-22 1971-07-29 Rca Corp Field effect controlled diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (en) * 1971-08-26 1973-03-01 Dionics Inc HIGH VOLTAGE P-N TRANSITION AND ITS APPLICATION IN SEMICONDUCTOR SWITCHING ELEMENTS, AND THE PROCESS FOR ITS MANUFACTURING
JPS5032942U (en) * 1973-07-23 1975-04-10
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same

Also Published As

Publication number Publication date
IT1126603B (en) 1986-05-21
IE48892B1 (en) 1985-06-12
IT7928206A0 (en) 1979-12-19
NL7920184A (en) 1980-10-31
JPS55501079A (en) 1980-12-04
ES487066A1 (en) 1980-09-16
WO1980001337A1 (en) 1980-06-26
SG32884G (en) 1985-02-08
AU529702B2 (en) 1983-06-16
GB2049283A (en) 1980-12-17
IL58970A (en) 1982-07-30
SE446139B (en) 1986-08-11
DD147897A5 (en) 1981-04-22
AU5386679A (en) 1980-06-26
IL58970A0 (en) 1980-03-31
IN153497B (en) 1984-07-21
IE792474L (en) 1980-06-20
GB2049283B (en) 1983-07-27
HU181030B (en) 1983-05-30
JPS6412106B2 (en) 1989-02-28
CH659151A5 (en) 1986-12-31
KR830001743A (en) 1983-05-18
PL220494A1 (en) 1980-09-08
FR2445026A1 (en) 1980-07-18
KR830002293B1 (en) 1983-10-21
FR2445026B1 (en) 1983-08-19

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