JPS52120774A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52120774A JPS52120774A JP3806776A JP3806776A JPS52120774A JP S52120774 A JPS52120774 A JP S52120774A JP 3806776 A JP3806776 A JP 3806776A JP 3806776 A JP3806776 A JP 3806776A JP S52120774 A JPS52120774 A JP S52120774A
- Authority
- JP
- Japan
- Prior art keywords
- conduction type
- electric conduction
- boundary
- semiconductor device
- single electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To avoid electric field concentration at the boundary area and thus to increase the voltage resistance by providing single electric conduction type region of high relative resistance which is compensated by adverse electric conduction type impurity to the region including the boundary between Schottky barrier of single electric conduction type semiconductor substrate and insulation film.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3806776A JPS52120774A (en) | 1976-04-05 | 1976-04-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3806776A JPS52120774A (en) | 1976-04-05 | 1976-04-05 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52120774A true JPS52120774A (en) | 1977-10-11 |
Family
ID=12515134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3806776A Pending JPS52120774A (en) | 1976-04-05 | 1976-04-05 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52120774A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156356A (en) * | 1979-05-11 | 1980-12-05 | Mitsubishi Electric Corp | Semiconductor ic and manufacture thereof |
JPS5649576A (en) * | 1979-09-28 | 1981-05-06 | Hitachi Ltd | Schottky diode |
JPS5833876A (en) * | 1981-08-25 | 1983-02-28 | Toshiba Corp | Semiconductor device |
JPS58199555A (en) * | 1982-05-17 | 1983-11-19 | Toshiba Corp | Semiconductor device |
-
1976
- 1976-04-05 JP JP3806776A patent/JPS52120774A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156356A (en) * | 1979-05-11 | 1980-12-05 | Mitsubishi Electric Corp | Semiconductor ic and manufacture thereof |
JPS5649576A (en) * | 1979-09-28 | 1981-05-06 | Hitachi Ltd | Schottky diode |
JPS5833876A (en) * | 1981-08-25 | 1983-02-28 | Toshiba Corp | Semiconductor device |
JPS58199555A (en) * | 1982-05-17 | 1983-11-19 | Toshiba Corp | Semiconductor device |
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