JPS5230166A - Method for fabrication of semiconductor device - Google Patents

Method for fabrication of semiconductor device

Info

Publication number
JPS5230166A
JPS5230166A JP10592875A JP10592875A JPS5230166A JP S5230166 A JPS5230166 A JP S5230166A JP 10592875 A JP10592875 A JP 10592875A JP 10592875 A JP10592875 A JP 10592875A JP S5230166 A JPS5230166 A JP S5230166A
Authority
JP
Japan
Prior art keywords
semiconductor device
fabrication
field plate
undthat
breaking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10592875A
Other languages
Japanese (ja)
Inventor
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10592875A priority Critical patent/JPS5230166A/en
Publication of JPS5230166A publication Critical patent/JPS5230166A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To fabricate high reliability semiconductor device without any breaking of Al wire by arranging thickness of passivation film near the field plate electrode larger than undthat under the field plate and by making planar junction for high voltage resistance.
COPYRIGHT: (C)1977,JPO&Japio
JP10592875A 1975-09-03 1975-09-03 Method for fabrication of semiconductor device Pending JPS5230166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10592875A JPS5230166A (en) 1975-09-03 1975-09-03 Method for fabrication of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10592875A JPS5230166A (en) 1975-09-03 1975-09-03 Method for fabrication of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5230166A true JPS5230166A (en) 1977-03-07

Family

ID=14420505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10592875A Pending JPS5230166A (en) 1975-09-03 1975-09-03 Method for fabrication of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5230166A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56136923U (en) * 1980-03-19 1981-10-16
JPS60194563A (en) * 1984-03-16 1985-10-03 Toshiba Corp Reverse conduction gate turn off thyristor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56136923U (en) * 1980-03-19 1981-10-16
JPS60194563A (en) * 1984-03-16 1985-10-03 Toshiba Corp Reverse conduction gate turn off thyristor device

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