JPS5341173A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5341173A
JPS5341173A JP11634976A JP11634976A JPS5341173A JP S5341173 A JPS5341173 A JP S5341173A JP 11634976 A JP11634976 A JP 11634976A JP 11634976 A JP11634976 A JP 11634976A JP S5341173 A JPS5341173 A JP S5341173A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture
forming
electrode
earthed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11634976A
Other languages
Japanese (ja)
Other versions
JPS5950091B2 (en
Inventor
Asamitsu Tosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11634976A priority Critical patent/JPS5950091B2/en
Publication of JPS5341173A publication Critical patent/JPS5341173A/en
Publication of JPS5950091B2 publication Critical patent/JPS5950091B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To achieve a mass production for the semiconductor device by forming an exposure groove between the electrode to be earthed and the earth electrode using an insulator film and then forming a short circuit film through an electric plating by soaking one of the above mentioned electrodes perfectly into the plating solution.
COPYRIGHT: (C)1978,JPO&Japio
JP11634976A 1976-09-28 1976-09-28 Manufacturing method of semiconductor device Expired JPS5950091B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11634976A JPS5950091B2 (en) 1976-09-28 1976-09-28 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11634976A JPS5950091B2 (en) 1976-09-28 1976-09-28 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5341173A true JPS5341173A (en) 1978-04-14
JPS5950091B2 JPS5950091B2 (en) 1984-12-06

Family

ID=14684744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11634976A Expired JPS5950091B2 (en) 1976-09-28 1976-09-28 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5950091B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612742A (en) * 1979-07-11 1981-02-07 Fujitsu Ltd Semiconductor device
JPS5837005A (en) * 1981-08-31 1983-03-04 Mitsui Toatsu Chem Inc Removal of volatile matter from thermoplastic resin

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6255265U (en) * 1985-09-27 1987-04-06

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612742A (en) * 1979-07-11 1981-02-07 Fujitsu Ltd Semiconductor device
JPS6217395B2 (en) * 1979-07-11 1987-04-17 Fujitsu Ltd
JPS5837005A (en) * 1981-08-31 1983-03-04 Mitsui Toatsu Chem Inc Removal of volatile matter from thermoplastic resin
JPS6152163B2 (en) * 1981-08-31 1986-11-12 Mitsui Toatsu Kagaku Kk

Also Published As

Publication number Publication date
JPS5950091B2 (en) 1984-12-06

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