JPS5276877A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5276877A JPS5276877A JP50153647A JP15364775A JPS5276877A JP S5276877 A JPS5276877 A JP S5276877A JP 50153647 A JP50153647 A JP 50153647A JP 15364775 A JP15364775 A JP 15364775A JP S5276877 A JPS5276877 A JP S5276877A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- facedownbonding
- direct
- transparent electrode
- production cost
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Wire Bonding (AREA)
Abstract
PURPOSE: To reduce production cost and to increase reliability by direct facedownbonding of metallic contact region of semiconductor device to transparent electrode using conductive paste.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50153647A JPS5276877A (en) | 1975-12-22 | 1975-12-22 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50153647A JPS5276877A (en) | 1975-12-22 | 1975-12-22 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5276877A true JPS5276877A (en) | 1977-06-28 |
Family
ID=15567095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50153647A Pending JPS5276877A (en) | 1975-12-22 | 1975-12-22 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5276877A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6010735A (en) * | 1983-06-30 | 1985-01-19 | Toshiba Corp | Semiconductor device |
-
1975
- 1975-12-22 JP JP50153647A patent/JPS5276877A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6010735A (en) * | 1983-06-30 | 1985-01-19 | Toshiba Corp | Semiconductor device |
JPH0469428B2 (en) * | 1983-06-30 | 1992-11-06 | Tokyo Shibaura Electric Co |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51150988A (en) | X-ray device | |
JPS5276877A (en) | Semiconductor device | |
JPS5234391A (en) | Production method of transparent electrode film | |
JPS524787A (en) | Transistor containing embedded base | |
JPS5249767A (en) | Semiconductor device | |
JPS5210096A (en) | Electro-optical display device and its method of manufacturing | |
JPS51151069A (en) | Electrode forming method of a semiconductor element | |
JPS5255476A (en) | Semiconductor device | |
JPS5362471A (en) | Semiconductor device | |
JPS53140967A (en) | Production of electrodes of semiconductor device | |
JPS5341173A (en) | Manufacture of semiconductor device | |
JPS52153383A (en) | Preparation of semiconductor device | |
JPS5237766A (en) | Semiconductor device | |
JPS5211772A (en) | Semiconductor device | |
JPS5283166A (en) | Semiconductor device and its production | |
JPS529624A (en) | Electric contact material | |
JPS51148840A (en) | Prestressed electrode | |
JPS5258370A (en) | Semiconductor device | |
JPS5279782A (en) | Semicondictor device | |
JPS5239196A (en) | Small sized electrical component | |
JPS53148974A (en) | Manufacture of semiconductor device | |
JPS52151565A (en) | Semiconductor device and its production | |
JPS52169A (en) | Semiconductor | |
JPS51127305A (en) | Manufacture of electrical brush assembly | |
JPS5390771A (en) | Field effect transistor |