Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
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Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP15662275ApriorityCriticalpatent/JPS5279782A/en
Publication of JPS5279782ApublicationCriticalpatent/JPS5279782A/en
PURPOSE: To produce a semiconductor device of less variationin electrical characteristics and higher reliability by forming same conductivity type impurity l layers deeper than base region partly superposing on the base region thereby forming electrodes.