JPS5237766A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5237766A
JPS5237766A JP11385775A JP11385775A JPS5237766A JP S5237766 A JPS5237766 A JP S5237766A JP 11385775 A JP11385775 A JP 11385775A JP 11385775 A JP11385775 A JP 11385775A JP S5237766 A JPS5237766 A JP S5237766A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
eliminated
decrease
contact surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11385775A
Other languages
Japanese (ja)
Inventor
Masatake Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11385775A priority Critical patent/JPS5237766A/en
Publication of JPS5237766A publication Critical patent/JPS5237766A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: Poor yield in conventional plated electrodes is eliminated and the decrease in reliability arising out of problems of contact surface condition by selective epitaxial method is solved, whereby a semiconductor of low costs having an electrode structure of stable electrical characteristics is obtained.
COPYRIGHT: (C)1977,JPO&Japio
JP11385775A 1975-09-19 1975-09-19 Semiconductor device Pending JPS5237766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11385775A JPS5237766A (en) 1975-09-19 1975-09-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11385775A JPS5237766A (en) 1975-09-19 1975-09-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5237766A true JPS5237766A (en) 1977-03-23

Family

ID=14622804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11385775A Pending JPS5237766A (en) 1975-09-19 1975-09-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5237766A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54106174A (en) * 1978-02-08 1979-08-20 Nec Corp Semiconductor device and its manufacture
JPS57173334U (en) * 1981-04-24 1982-11-01
JP2006060177A (en) * 2004-08-24 2006-03-02 Sumitomo Chemical Co Ltd Manufacturing method of compound semiconductor epitaxial substrate having pn junction

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54106174A (en) * 1978-02-08 1979-08-20 Nec Corp Semiconductor device and its manufacture
JPS57173334U (en) * 1981-04-24 1982-11-01
JP2006060177A (en) * 2004-08-24 2006-03-02 Sumitomo Chemical Co Ltd Manufacturing method of compound semiconductor epitaxial substrate having pn junction
WO2006022245A1 (en) * 2004-08-24 2006-03-02 Sumitomo Chemical Company, Limited Method for producing compound semiconductor epitaxial substrate having pn junction
US8906158B2 (en) 2004-08-24 2014-12-09 Sumitomo Chemical Company, Limited Method for producing compound semiconductor epitaxial substrate having PN junction

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