JPS5438777A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5438777A
JPS5438777A JP10418277A JP10418277A JPS5438777A JP S5438777 A JPS5438777 A JP S5438777A JP 10418277 A JP10418277 A JP 10418277A JP 10418277 A JP10418277 A JP 10418277A JP S5438777 A JPS5438777 A JP S5438777A
Authority
JP
Japan
Prior art keywords
semiconductor device
region
current
exterpolated
highdielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10418277A
Other languages
Japanese (ja)
Other versions
JPS5917864B2 (en
Inventor
Minoru Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10418277A priority Critical patent/JPS5917864B2/en
Publication of JPS5438777A publication Critical patent/JPS5438777A/en
Publication of JPS5917864B2 publication Critical patent/JPS5917864B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To reduce forward voltage drop in the large current region of a highdielectric-strength large-current semiconductor device by making the exterpolated impurity concentration of the region having the gate electrode of the 4layer structure semiconductor device 9 X 1017 to 1.3 X 1018 atms/cm3.
COPYRIGHT: (C)1979,JPO&Japio
JP10418277A 1977-09-01 1977-09-01 semiconductor equipment Expired JPS5917864B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10418277A JPS5917864B2 (en) 1977-09-01 1977-09-01 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10418277A JPS5917864B2 (en) 1977-09-01 1977-09-01 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5438777A true JPS5438777A (en) 1979-03-23
JPS5917864B2 JPS5917864B2 (en) 1984-04-24

Family

ID=14373849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10418277A Expired JPS5917864B2 (en) 1977-09-01 1977-09-01 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5917864B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59214261A (en) * 1983-05-20 1984-12-04 Mitsubishi Electric Corp Gate turn-off thyristor
US4951109A (en) * 1987-03-09 1990-08-21 Siemens Aktiengesellschaft Turn-off power semiconductor component

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59214261A (en) * 1983-05-20 1984-12-04 Mitsubishi Electric Corp Gate turn-off thyristor
JPH0479147B2 (en) * 1983-05-20 1992-12-15 Mitsubishi Electric Corp
US4951109A (en) * 1987-03-09 1990-08-21 Siemens Aktiengesellschaft Turn-off power semiconductor component

Also Published As

Publication number Publication date
JPS5917864B2 (en) 1984-04-24

Similar Documents

Publication Publication Date Title
JPS51126761A (en) Schottky barrier type semi-conductor unit
JPS5290273A (en) Semiconductor device
JPS5438777A (en) Semiconductor device
JPS51118395A (en) Semiconductor emitting unit and manufacturing process
JPS5249767A (en) Semiconductor device
JPS5286049A (en) Semiconductor switch
JPS5230389A (en) Thyristor
JPS53108380A (en) Semiconductor device
JPS53105389A (en) Manufacture for insulating gate type semiconductor integrated circuit
JPS5211872A (en) Semiconductor device
JPS5274280A (en) Semiconductor device and its production
JPS5278389A (en) Semiconductor memory device
JPS52153383A (en) Preparation of semiconductor device
JPS5263687A (en) Semiconductor device
JPS5375430A (en) Inverse conduction gto rectifler
JPS5313883A (en) Semiconductor device and its production
JPS5323579A (en) Production of semiconductor device
JPS5237766A (en) Semiconductor device
JPS536580A (en) Integrated circuit
JPS53118984A (en) Semiconductor switch
JPS5414282A (en) Battery voltage detecting circuit
JPS533071A (en) Semiconductor device
JPS51135381A (en) Semiconductor device and its manufacturing method
JPS545618A (en) Semiconductor device
JPS5326588A (en) Semicond uctor control device