JPS536580A - Integrated circuit - Google Patents
Integrated circuitInfo
- Publication number
- JPS536580A JPS536580A JP8154176A JP8154176A JPS536580A JP S536580 A JPS536580 A JP S536580A JP 8154176 A JP8154176 A JP 8154176A JP 8154176 A JP8154176 A JP 8154176A JP S536580 A JPS536580 A JP S536580A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- doping
- impurity
- opration
- speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To realize high-speed opration by doping an impurity to gate electrodes at a high concentration before or after impurity doping in a Si-gate type MIS-IC.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8154176A JPS536580A (en) | 1976-07-08 | 1976-07-08 | Integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8154176A JPS536580A (en) | 1976-07-08 | 1976-07-08 | Integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS536580A true JPS536580A (en) | 1978-01-21 |
JPS6135707B2 JPS6135707B2 (en) | 1986-08-14 |
Family
ID=13749148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8154176A Granted JPS536580A (en) | 1976-07-08 | 1976-07-08 | Integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS536580A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54111786A (en) * | 1978-02-21 | 1979-09-01 | Nec Corp | Manufacture for complementary silicon gate mos field effect semiconductor device |
-
1976
- 1976-07-08 JP JP8154176A patent/JPS536580A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54111786A (en) * | 1978-02-21 | 1979-09-01 | Nec Corp | Manufacture for complementary silicon gate mos field effect semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6135707B2 (en) | 1986-08-14 |
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