JPS5211872A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5211872A
JPS5211872A JP50087397A JP8739775A JPS5211872A JP S5211872 A JPS5211872 A JP S5211872A JP 50087397 A JP50087397 A JP 50087397A JP 8739775 A JP8739775 A JP 8739775A JP S5211872 A JPS5211872 A JP S5211872A
Authority
JP
Japan
Prior art keywords
semiconductor
parasiticly
confining
cmos
shall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50087397A
Other languages
Japanese (ja)
Other versions
JPS626347B2 (en
Inventor
Kazuo Sato
Mitsuhiko Ueno
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP50087397A priority Critical patent/JPS626347B2/ja
Publication of JPS5211872A publication Critical patent/JPS5211872A/en
Priority claimed from US05/917,175 external-priority patent/US4152717A/en
Publication of JPS626347B2 publication Critical patent/JPS626347B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

PURPOSE: In the CMOS, by confining the operation of the parasitic bipolar Tr, the occurrence of an abnormal current due to the operation of a thyristor circuit constituted parasiticly shall be prevented.
COPYRIGHT: (C)1977,JPO&Japio
JP50087397A 1975-07-18 1975-07-18 Expired JPS626347B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50087397A JPS626347B2 (en) 1975-07-18 1975-07-18

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP50087397A JPS626347B2 (en) 1975-07-18 1975-07-18
GB2928276A GB1559582A (en) 1975-07-18 1976-07-14 Complementary mosfet device
CH923676A CH611739A5 (en) 1975-07-18 1976-07-19 CMOS Semiconductor circuit
FR7621993A FR2318503B1 (en) 1975-07-18 1976-07-19
DE19762632447 DE2632447A1 (en) 1975-07-18 1976-07-19 CMOS SEMICONDUCTOR DEVICE
US05/917,175 US4152717A (en) 1975-07-18 1978-06-20 Complementary MOSFET device
MY8100316A MY8100316A (en) 1975-07-18 1981-12-30 A complementary mosfet device

Publications (2)

Publication Number Publication Date
JPS5211872A true JPS5211872A (en) 1977-01-29
JPS626347B2 JPS626347B2 (en) 1987-02-10

Family

ID=13913732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50087397A Expired JPS626347B2 (en) 1975-07-18 1975-07-18

Country Status (6)

Country Link
JP (1) JPS626347B2 (en)
CH (1) CH611739A5 (en)
DE (1) DE2632447A1 (en)
FR (1) FR2318503B1 (en)
GB (1) GB1559582A (en)
MY (1) MY8100316A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210660A (en) * 1982-06-01 1983-12-07 Seiko Epson Corp Semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6159540B2 (en) * 1977-04-15 1986-12-17 Hitachi Ltd
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS6245706B2 (en) * 1978-12-27 1987-09-28 Fujitsu Ltd

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL297002A (en) * 1962-08-23 1900-01-01
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210660A (en) * 1982-06-01 1983-12-07 Seiko Epson Corp Semiconductor device
JPH0534832B2 (en) * 1982-06-01 1993-05-25 Seiko Epson Corp

Also Published As

Publication number Publication date
FR2318503A1 (en) 1977-02-11
GB1559582A (en) 1980-01-23
FR2318503B1 (en) 1980-05-16
MY8100316A (en) 1981-12-31
DE2632447A1 (en) 1977-01-20
CH611739A5 (en) 1979-06-15
JPS626347B2 (en) 1987-02-10

Similar Documents

Publication Publication Date Title
JPS5375828A (en) Semiconductor circuit
JPS5211872A (en) Semiconductor device
JPS5330760A (en) Switch device for condenser
JPS52139390A (en) Semiconductor integrated circuit device
JPS5325339A (en) Transistor protection circuit
JPS52187A (en) Hall effect semiconductor integrated circuit
JPS51123533A (en) Transistor circuit
JPS5211871A (en) Semiconductor device
JPS5232557A (en) Supply control device
JPS5366551A (en) Semiconductor current limiter
JPS5211874A (en) Semiconductor device
JPS529384A (en) Transistor circuit device
JPS5281544A (en) Trip circuit of circuit breaker
JPS5245294A (en) Semiconductor device
JPS5211881A (en) Semiconductor integrated circuit device
JPS51115782A (en) Semiconductor apparatus
JPS5211876A (en) Semiconductor device
JPS5211873A (en) Semiconductor device
JPS5219217A (en) Overcurrent limiting device
JPS5282189A (en) Semiconductor device
JPS533071A (en) Semiconductor device
JPS5265679A (en) Semiconductor device
JPS531017A (en) Protective circuit
JPS5238113A (en) Magnetic field circuit in direct current motor
JPS51147288A (en) Semiconductor device