JPS53105389A - Manufacture for insulating gate type semiconductor integrated circuit - Google Patents
Manufacture for insulating gate type semiconductor integrated circuitInfo
- Publication number
- JPS53105389A JPS53105389A JP1933277A JP1933277A JPS53105389A JP S53105389 A JPS53105389 A JP S53105389A JP 1933277 A JP1933277 A JP 1933277A JP 1933277 A JP1933277 A JP 1933277A JP S53105389 A JPS53105389 A JP S53105389A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- integrated circuit
- type semiconductor
- semiconductor integrated
- gate type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To reduce the two dimentional occupied area by growing the gate insulating film for load transistor and the polisilicon substratte on the gate electrode of the driving transistor in RAM element and by commonly using the gate electrode.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52019332A JPS5951146B2 (en) | 1977-02-25 | 1977-02-25 | Method for manufacturing insulated gate semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52019332A JPS5951146B2 (en) | 1977-02-25 | 1977-02-25 | Method for manufacturing insulated gate semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53105389A true JPS53105389A (en) | 1978-09-13 |
JPS5951146B2 JPS5951146B2 (en) | 1984-12-12 |
Family
ID=11996443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52019332A Expired JPS5951146B2 (en) | 1977-02-25 | 1977-02-25 | Method for manufacturing insulated gate semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5951146B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5598852A (en) * | 1979-01-23 | 1980-07-28 | Nec Corp | Memory device |
JPS5691470A (en) * | 1979-12-25 | 1981-07-24 | Toshiba Corp | Semiconductor |
JPS57192081A (en) * | 1981-05-19 | 1982-11-26 | Ibm | Field effect transistor unit |
JPS5892253A (en) * | 1981-11-28 | 1983-06-01 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS61121467A (en) * | 1984-11-19 | 1986-06-09 | Seiko Epson Corp | Semiconductor memory |
-
1977
- 1977-02-25 JP JP52019332A patent/JPS5951146B2/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5598852A (en) * | 1979-01-23 | 1980-07-28 | Nec Corp | Memory device |
JPS5691470A (en) * | 1979-12-25 | 1981-07-24 | Toshiba Corp | Semiconductor |
JPS57192081A (en) * | 1981-05-19 | 1982-11-26 | Ibm | Field effect transistor unit |
JPH0325949B2 (en) * | 1981-05-19 | 1991-04-09 | Intaanashonaru Bijinesu Mashiinzu Corp | |
JPS5892253A (en) * | 1981-11-28 | 1983-06-01 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS61121467A (en) * | 1984-11-19 | 1986-06-09 | Seiko Epson Corp | Semiconductor memory |
JPH0691222B2 (en) * | 1984-11-19 | 1994-11-14 | セイコーエプソン株式会社 | Semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
JPS5951146B2 (en) | 1984-12-12 |
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