JPS5263687A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5263687A JPS5263687A JP13945775A JP13945775A JPS5263687A JP S5263687 A JPS5263687 A JP S5263687A JP 13945775 A JP13945775 A JP 13945775A JP 13945775 A JP13945775 A JP 13945775A JP S5263687 A JPS5263687 A JP S5263687A
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- semiconductor device
- layr
- turn
- base layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To considerably increase current riding rate at the turn-on by forming a high impurity concentration layr connected to the control electrode of a main thyristor or the cathode electrode of an auxiliary thyristor in the base layer of a thyristor.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13945775A JPS5263687A (en) | 1975-11-20 | 1975-11-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13945775A JPS5263687A (en) | 1975-11-20 | 1975-11-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5263687A true JPS5263687A (en) | 1977-05-26 |
Family
ID=15245650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13945775A Pending JPS5263687A (en) | 1975-11-20 | 1975-11-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5263687A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4574296A (en) * | 1982-08-05 | 1986-03-04 | Kabushiki Kaisha Meidensha | Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations |
JP2010232564A (en) * | 2009-03-27 | 2010-10-14 | Shindengen Electric Mfg Co Ltd | Three-terminal thyristor |
-
1975
- 1975-11-20 JP JP13945775A patent/JPS5263687A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4574296A (en) * | 1982-08-05 | 1986-03-04 | Kabushiki Kaisha Meidensha | Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations |
JP2010232564A (en) * | 2009-03-27 | 2010-10-14 | Shindengen Electric Mfg Co Ltd | Three-terminal thyristor |
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