JPS5263687A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5263687A
JPS5263687A JP13945775A JP13945775A JPS5263687A JP S5263687 A JPS5263687 A JP S5263687A JP 13945775 A JP13945775 A JP 13945775A JP 13945775 A JP13945775 A JP 13945775A JP S5263687 A JPS5263687 A JP S5263687A
Authority
JP
Japan
Prior art keywords
thyristor
semiconductor device
layr
turn
base layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13945775A
Other languages
Japanese (ja)
Inventor
Katsuhiro Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13945775A priority Critical patent/JPS5263687A/en
Publication of JPS5263687A publication Critical patent/JPS5263687A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To considerably increase current riding rate at the turn-on by forming a high impurity concentration layr connected to the control electrode of a main thyristor or the cathode electrode of an auxiliary thyristor in the base layer of a thyristor.
COPYRIGHT: (C)1977,JPO&Japio
JP13945775A 1975-11-20 1975-11-20 Semiconductor device Pending JPS5263687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13945775A JPS5263687A (en) 1975-11-20 1975-11-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13945775A JPS5263687A (en) 1975-11-20 1975-11-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5263687A true JPS5263687A (en) 1977-05-26

Family

ID=15245650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13945775A Pending JPS5263687A (en) 1975-11-20 1975-11-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5263687A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574296A (en) * 1982-08-05 1986-03-04 Kabushiki Kaisha Meidensha Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations
JP2010232564A (en) * 2009-03-27 2010-10-14 Shindengen Electric Mfg Co Ltd Three-terminal thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574296A (en) * 1982-08-05 1986-03-04 Kabushiki Kaisha Meidensha Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations
JP2010232564A (en) * 2009-03-27 2010-10-14 Shindengen Electric Mfg Co Ltd Three-terminal thyristor

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