JPS5316584A - Semiconductor control device - Google Patents

Semiconductor control device

Info

Publication number
JPS5316584A
JPS5316584A JP9096176A JP9096176A JPS5316584A JP S5316584 A JPS5316584 A JP S5316584A JP 9096176 A JP9096176 A JP 9096176A JP 9096176 A JP9096176 A JP 9096176A JP S5316584 A JPS5316584 A JP S5316584A
Authority
JP
Japan
Prior art keywords
control device
semiconductor control
type
emitter layer
shorting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9096176A
Other languages
Japanese (ja)
Inventor
Akira Kawakami
Katsuhiro Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9096176A priority Critical patent/JPS5316584A/en
Publication of JPS5316584A publication Critical patent/JPS5316584A/en
Pending legal-status Critical Current

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Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To eliminate turn-off failure at the application of an OFF voltage of high dv/dt by providing a third shorting emitter layer of an n type as specified within a second emitter layer of an n type.
COPYRIGHT: (C)1978,JPO&Japio
JP9096176A 1976-07-29 1976-07-29 Semiconductor control device Pending JPS5316584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9096176A JPS5316584A (en) 1976-07-29 1976-07-29 Semiconductor control device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9096176A JPS5316584A (en) 1976-07-29 1976-07-29 Semiconductor control device

Publications (1)

Publication Number Publication Date
JPS5316584A true JPS5316584A (en) 1978-02-15

Family

ID=14013083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9096176A Pending JPS5316584A (en) 1976-07-29 1976-07-29 Semiconductor control device

Country Status (1)

Country Link
JP (1) JPS5316584A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923561A (en) * 1982-07-12 1984-02-07 オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト Thyristor
US4450467A (en) * 1978-09-14 1984-05-22 Hitachi, Ltd. Gate turn-off thyristor with selective anode penetrating shorts
JPS63265465A (en) * 1986-12-01 1988-11-01 Toshiba Corp Semiconductor device
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
US4799095A (en) * 1987-07-06 1989-01-17 General Electric Company Metal oxide semiconductor gated turn off thyristor
US4918509A (en) * 1986-04-12 1990-04-17 Licentia Patent-Verwaltungs-Gmbh Gate turn-off thyristor
US5028974A (en) * 1986-12-01 1991-07-02 Kabushiki Kaisha Toshiba Semiconductor switching device with anode shortening structure

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4450467A (en) * 1978-09-14 1984-05-22 Hitachi, Ltd. Gate turn-off thyristor with selective anode penetrating shorts
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
JPS5923561A (en) * 1982-07-12 1984-02-07 オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト Thyristor
US4918509A (en) * 1986-04-12 1990-04-17 Licentia Patent-Verwaltungs-Gmbh Gate turn-off thyristor
JPS63265465A (en) * 1986-12-01 1988-11-01 Toshiba Corp Semiconductor device
US5028974A (en) * 1986-12-01 1991-07-02 Kabushiki Kaisha Toshiba Semiconductor switching device with anode shortening structure
US4799095A (en) * 1987-07-06 1989-01-17 General Electric Company Metal oxide semiconductor gated turn off thyristor

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