JPS5269284A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5269284A
JPS5269284A JP14567475A JP14567475A JPS5269284A JP S5269284 A JPS5269284 A JP S5269284A JP 14567475 A JP14567475 A JP 14567475A JP 14567475 A JP14567475 A JP 14567475A JP S5269284 A JPS5269284 A JP S5269284A
Authority
JP
Japan
Prior art keywords
semiconductor device
layer
electrode
value
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14567475A
Other languages
Japanese (ja)
Inventor
Goji Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14567475A priority Critical patent/JPS5269284A/en
Publication of JPS5269284A publication Critical patent/JPS5269284A/en
Pending legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To prevent an early-stage digradation of the electrode-forming layer by forming an electrode with a help of a AlGaAs layer of which X value is the same or larger than the following X value on the confinment layer AlxGa1-xAs.
COPYRIGHT: (C)1977,JPO&Japio
JP14567475A 1975-12-05 1975-12-05 Semiconductor device Pending JPS5269284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14567475A JPS5269284A (en) 1975-12-05 1975-12-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14567475A JPS5269284A (en) 1975-12-05 1975-12-05 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5269284A true JPS5269284A (en) 1977-06-08

Family

ID=15390452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14567475A Pending JPS5269284A (en) 1975-12-05 1975-12-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5269284A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5442989A (en) * 1977-08-30 1979-04-05 Nec Corp Semiconductor luminous element
JPS5466789A (en) * 1977-10-18 1979-05-29 Thomson Csf Diode for generating and detecting light of predetermined wavelength
JPS5527651A (en) * 1978-08-21 1980-02-27 Nippon Telegr & Teleph Corp <Ntt> Method of forming electrode for p-type inp crystal surface
JPS56169389A (en) * 1980-04-30 1981-12-26 Siemens Ag Laser diode
JPS58162089A (en) * 1982-03-19 1983-09-26 Sanyo Electric Co Ltd Semiconductor laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SOVIET PHYSICS SEMICONDUCTORS#N9=1970 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5442989A (en) * 1977-08-30 1979-04-05 Nec Corp Semiconductor luminous element
JPS5466789A (en) * 1977-10-18 1979-05-29 Thomson Csf Diode for generating and detecting light of predetermined wavelength
JPS6244434B2 (en) * 1977-10-18 1987-09-21 Tomuson Sa
JPS5527651A (en) * 1978-08-21 1980-02-27 Nippon Telegr & Teleph Corp <Ntt> Method of forming electrode for p-type inp crystal surface
JPS56169389A (en) * 1980-04-30 1981-12-26 Siemens Ag Laser diode
JPS58162089A (en) * 1982-03-19 1983-09-26 Sanyo Electric Co Ltd Semiconductor laser

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