JPS5269284A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5269284A JPS5269284A JP14567475A JP14567475A JPS5269284A JP S5269284 A JPS5269284 A JP S5269284A JP 14567475 A JP14567475 A JP 14567475A JP 14567475 A JP14567475 A JP 14567475A JP S5269284 A JPS5269284 A JP S5269284A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- layer
- electrode
- value
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To prevent an early-stage digradation of the electrode-forming layer by forming an electrode with a help of a AlGaAs layer of which X value is the same or larger than the following X value on the confinment layer AlxGa1-xAs.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14567475A JPS5269284A (en) | 1975-12-05 | 1975-12-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14567475A JPS5269284A (en) | 1975-12-05 | 1975-12-05 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5269284A true JPS5269284A (en) | 1977-06-08 |
Family
ID=15390452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14567475A Pending JPS5269284A (en) | 1975-12-05 | 1975-12-05 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5269284A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5442989A (en) * | 1977-08-30 | 1979-04-05 | Nec Corp | Semiconductor luminous element |
JPS5466789A (en) * | 1977-10-18 | 1979-05-29 | Thomson Csf | Diode for generating and detecting light of predetermined wavelength |
JPS5527651A (en) * | 1978-08-21 | 1980-02-27 | Nippon Telegr & Teleph Corp <Ntt> | Method of forming electrode for p-type inp crystal surface |
JPS56169389A (en) * | 1980-04-30 | 1981-12-26 | Siemens Ag | Laser diode |
JPS58162089A (en) * | 1982-03-19 | 1983-09-26 | Sanyo Electric Co Ltd | Semiconductor laser |
-
1975
- 1975-12-05 JP JP14567475A patent/JPS5269284A/en active Pending
Non-Patent Citations (1)
Title |
---|
SOVIET PHYSICS SEMICONDUCTORS#N9=1970 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5442989A (en) * | 1977-08-30 | 1979-04-05 | Nec Corp | Semiconductor luminous element |
JPS5466789A (en) * | 1977-10-18 | 1979-05-29 | Thomson Csf | Diode for generating and detecting light of predetermined wavelength |
JPS6244434B2 (en) * | 1977-10-18 | 1987-09-21 | Tomuson Sa | |
JPS5527651A (en) * | 1978-08-21 | 1980-02-27 | Nippon Telegr & Teleph Corp <Ntt> | Method of forming electrode for p-type inp crystal surface |
JPS56169389A (en) * | 1980-04-30 | 1981-12-26 | Siemens Ag | Laser diode |
JPS58162089A (en) * | 1982-03-19 | 1983-09-26 | Sanyo Electric Co Ltd | Semiconductor laser |
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