JPS5372471A - Mis type semiconductor device - Google Patents

Mis type semiconductor device

Info

Publication number
JPS5372471A
JPS5372471A JP14776576A JP14776576A JPS5372471A JP S5372471 A JPS5372471 A JP S5372471A JP 14776576 A JP14776576 A JP 14776576A JP 14776576 A JP14776576 A JP 14776576A JP S5372471 A JPS5372471 A JP S5372471A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
mis type
mis
decreasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14776576A
Other languages
Japanese (ja)
Inventor
Hideshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14776576A priority Critical patent/JPS5372471A/en
Priority to US05/859,108 priority patent/US4154192A/en
Publication of JPS5372471A publication Critical patent/JPS5372471A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To manufacture the device with high breakdown voltage, by decreasing the valve resistance of Si substrate so that the switch back phenomenon is hardly caused.
COPYRIGHT: (C)1978,JPO&Japio
JP14776576A 1976-12-10 1976-12-10 Mis type semiconductor device Pending JPS5372471A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14776576A JPS5372471A (en) 1976-12-10 1976-12-10 Mis type semiconductor device
US05/859,108 US4154192A (en) 1976-12-10 1977-12-09 Manufacturing apparatus for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14776576A JPS5372471A (en) 1976-12-10 1976-12-10 Mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5372471A true JPS5372471A (en) 1978-06-27

Family

ID=15437658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14776576A Pending JPS5372471A (en) 1976-12-10 1976-12-10 Mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5372471A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394674A (en) * 1979-10-09 1983-07-19 Nippon Electric Co., Ltd. Insulated gate field effect transistor
US4506279A (en) * 1982-09-17 1985-03-19 Tokyo Shibaura Denki Kabushiki Kaisha Metal-oxide-semiconductor device with bilayered source and drain
US4684992A (en) * 1984-11-21 1987-08-04 Olympus Optical Co., Ltd. Solid state image sensor having means to reset and clear static induction transistor photoelements
US4733286A (en) * 1983-12-28 1988-03-22 Olympus Optical Co., Ltd. Semiconductor photoelectric converting device
US6091644A (en) * 1998-03-21 2000-07-18 Hsu; Ching-Hsiang Structure of a channel write/erase flash memory cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394674A (en) * 1979-10-09 1983-07-19 Nippon Electric Co., Ltd. Insulated gate field effect transistor
US4506279A (en) * 1982-09-17 1985-03-19 Tokyo Shibaura Denki Kabushiki Kaisha Metal-oxide-semiconductor device with bilayered source and drain
US4733286A (en) * 1983-12-28 1988-03-22 Olympus Optical Co., Ltd. Semiconductor photoelectric converting device
US4684992A (en) * 1984-11-21 1987-08-04 Olympus Optical Co., Ltd. Solid state image sensor having means to reset and clear static induction transistor photoelements
US6091644A (en) * 1998-03-21 2000-07-18 Hsu; Ching-Hsiang Structure of a channel write/erase flash memory cell

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