JPS5372471A - Mis type semiconductor device - Google Patents
Mis type semiconductor deviceInfo
- Publication number
- JPS5372471A JPS5372471A JP14776576A JP14776576A JPS5372471A JP S5372471 A JPS5372471 A JP S5372471A JP 14776576 A JP14776576 A JP 14776576A JP 14776576 A JP14776576 A JP 14776576A JP S5372471 A JPS5372471 A JP S5372471A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type semiconductor
- mis type
- mis
- decreasing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To manufacture the device with high breakdown voltage, by decreasing the valve resistance of Si substrate so that the switch back phenomenon is hardly caused.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14776576A JPS5372471A (en) | 1976-12-10 | 1976-12-10 | Mis type semiconductor device |
US05/859,108 US4154192A (en) | 1976-12-10 | 1977-12-09 | Manufacturing apparatus for semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14776576A JPS5372471A (en) | 1976-12-10 | 1976-12-10 | Mis type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5372471A true JPS5372471A (en) | 1978-06-27 |
Family
ID=15437658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14776576A Pending JPS5372471A (en) | 1976-12-10 | 1976-12-10 | Mis type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5372471A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4394674A (en) * | 1979-10-09 | 1983-07-19 | Nippon Electric Co., Ltd. | Insulated gate field effect transistor |
US4506279A (en) * | 1982-09-17 | 1985-03-19 | Tokyo Shibaura Denki Kabushiki Kaisha | Metal-oxide-semiconductor device with bilayered source and drain |
US4684992A (en) * | 1984-11-21 | 1987-08-04 | Olympus Optical Co., Ltd. | Solid state image sensor having means to reset and clear static induction transistor photoelements |
US4733286A (en) * | 1983-12-28 | 1988-03-22 | Olympus Optical Co., Ltd. | Semiconductor photoelectric converting device |
US6091644A (en) * | 1998-03-21 | 2000-07-18 | Hsu; Ching-Hsiang | Structure of a channel write/erase flash memory cell |
-
1976
- 1976-12-10 JP JP14776576A patent/JPS5372471A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4394674A (en) * | 1979-10-09 | 1983-07-19 | Nippon Electric Co., Ltd. | Insulated gate field effect transistor |
US4506279A (en) * | 1982-09-17 | 1985-03-19 | Tokyo Shibaura Denki Kabushiki Kaisha | Metal-oxide-semiconductor device with bilayered source and drain |
US4733286A (en) * | 1983-12-28 | 1988-03-22 | Olympus Optical Co., Ltd. | Semiconductor photoelectric converting device |
US4684992A (en) * | 1984-11-21 | 1987-08-04 | Olympus Optical Co., Ltd. | Solid state image sensor having means to reset and clear static induction transistor photoelements |
US6091644A (en) * | 1998-03-21 | 2000-07-18 | Hsu; Ching-Hsiang | Structure of a channel write/erase flash memory cell |
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