JPS5350683A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS5350683A
JPS5350683A JP12566976A JP12566976A JPS5350683A JP S5350683 A JPS5350683 A JP S5350683A JP 12566976 A JP12566976 A JP 12566976A JP 12566976 A JP12566976 A JP 12566976A JP S5350683 A JPS5350683 A JP S5350683A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
mos type
mosfet
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12566976A
Other languages
Japanese (ja)
Other versions
JPS6027193B2 (en
Inventor
Hayaaki Fukumoto
Kyohiko Kotani
Satoru Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12566976A priority Critical patent/JPS6027193B2/en
Publication of JPS5350683A publication Critical patent/JPS5350683A/en
Publication of JPS6027193B2 publication Critical patent/JPS6027193B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a device whose load characteristics as a load MOSFET does not become inferior to the characteristics under resistance load even if the substrate constant K of the MOSFET is large by inhibiting the punch-through when channel length is short.
COPYRIGHT: (C)1978,JPO&Japio
JP12566976A 1976-10-19 1976-10-19 semiconductor circuit device Expired JPS6027193B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12566976A JPS6027193B2 (en) 1976-10-19 1976-10-19 semiconductor circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12566976A JPS6027193B2 (en) 1976-10-19 1976-10-19 semiconductor circuit device

Publications (2)

Publication Number Publication Date
JPS5350683A true JPS5350683A (en) 1978-05-09
JPS6027193B2 JPS6027193B2 (en) 1985-06-27

Family

ID=14915716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12566976A Expired JPS6027193B2 (en) 1976-10-19 1976-10-19 semiconductor circuit device

Country Status (1)

Country Link
JP (1) JPS6027193B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6418263A (en) * 1987-07-14 1989-01-23 Sanyo Electric Co Manufacture of depletion mode metal-oxide semiconductor device
JPS6418262A (en) * 1987-07-14 1989-01-23 Sanyo Electric Co Depletion mode metal-oxide semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6418263A (en) * 1987-07-14 1989-01-23 Sanyo Electric Co Manufacture of depletion mode metal-oxide semiconductor device
JPS6418262A (en) * 1987-07-14 1989-01-23 Sanyo Electric Co Depletion mode metal-oxide semiconductor device

Also Published As

Publication number Publication date
JPS6027193B2 (en) 1985-06-27

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