JPS6418262A - Depletion mode metal-oxide semiconductor device - Google Patents
Depletion mode metal-oxide semiconductor deviceInfo
- Publication number
- JPS6418262A JPS6418262A JP17514787A JP17514787A JPS6418262A JP S6418262 A JPS6418262 A JP S6418262A JP 17514787 A JP17514787 A JP 17514787A JP 17514787 A JP17514787 A JP 17514787A JP S6418262 A JPS6418262 A JP S6418262A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- depletion mode
- semiconductor device
- oxide semiconductor
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To suppress an increase in a drain current with the boost of a drain voltage by implanting arsenic in a channel layer to provide a deep ion implantation layer having the same conductivity type as a substrate. CONSTITUTION:After masking the surface of an element formation region 4 wherein a field oxide film 3 and an enhancement type MOS transistor are formed with a resist layer 6, <11>B<+> is ion-implanted in the element formation region 4 of an exposed depletion MOS transistor and a deep ion implantation layer 7 is formed. Then using a mask of the same resist layer 6, <75>As<+> is ion- implanted and a shallow depletion mode N-type channel layer 8 is formed. In this way, an increase in a drain current which takes place in response to a drain voltage can be suppressed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17514787A JPS6418262A (en) | 1987-07-14 | 1987-07-14 | Depletion mode metal-oxide semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17514787A JPS6418262A (en) | 1987-07-14 | 1987-07-14 | Depletion mode metal-oxide semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6418262A true JPS6418262A (en) | 1989-01-23 |
Family
ID=15991098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17514787A Pending JPS6418262A (en) | 1987-07-14 | 1987-07-14 | Depletion mode metal-oxide semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6418262A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2371911A1 (en) | 2010-03-29 | 2011-10-05 | Fujifilm Corporation | Active radiation curable ink composition for inkjet recording, printed matter, method of manufacturing printed matter, molded article of printed matter, and method of manufacturing molded article of printed matter |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5350683A (en) * | 1976-10-19 | 1978-05-09 | Mitsubishi Electric Corp | Mos type semiconductor device |
JPS6089972A (en) * | 1983-10-24 | 1985-05-20 | Nec Corp | Mis type semiconductor device |
-
1987
- 1987-07-14 JP JP17514787A patent/JPS6418262A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5350683A (en) * | 1976-10-19 | 1978-05-09 | Mitsubishi Electric Corp | Mos type semiconductor device |
JPS6089972A (en) * | 1983-10-24 | 1985-05-20 | Nec Corp | Mis type semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2371911A1 (en) | 2010-03-29 | 2011-10-05 | Fujifilm Corporation | Active radiation curable ink composition for inkjet recording, printed matter, method of manufacturing printed matter, molded article of printed matter, and method of manufacturing molded article of printed matter |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100187768B1 (en) | Threshold adjustment in vertical dmos device and manufacturing method | |
JPS55148464A (en) | Mos semiconductor device and its manufacture | |
JPS5688354A (en) | Semiconductor integrated circuit device | |
GB1447236A (en) | Methods of manufacturing integrated circuits including field effect transistors | |
DE3477097D1 (en) | Method of producing a highly integrated circuit of mos field-effect transistors | |
JPS5710266A (en) | Mis field effect semiconductor device | |
US4713329A (en) | Well mask for CMOS process | |
JPH01232765A (en) | Insulated-gate field-effect transistor | |
JPS57192063A (en) | Manufacture of semiconductor device | |
JPS6418262A (en) | Depletion mode metal-oxide semiconductor device | |
EP0414400A3 (en) | Mosfet depletion device | |
US4683485A (en) | Technique for increasing gate-drain breakdown voltage of ion-implanted JFET | |
JPS6418263A (en) | Manufacture of depletion mode metal-oxide semiconductor device | |
JPS5563873A (en) | Semiconductor integrated circuit | |
JPH05235346A (en) | Semiconductor device and manufacture thereof | |
JPS5723259A (en) | Complementary type mos semiconductor device | |
KR970018259A (en) | Transistor manufacturing method of semiconductor device | |
JPS6428960A (en) | Mos semiconductor transistor | |
JPS5583265A (en) | Semiconductor device and method of fabricating the same | |
JPS5563876A (en) | Field-effect semiconductor device | |
JPS57136358A (en) | Integrated circuit device and manufacture thereof | |
JPS564280A (en) | Insulated gate type field effect transistor | |
JPS57192083A (en) | Semiconductor device | |
JPS5580361A (en) | Production of vertical junction gate type field effect transistor | |
JPS55127052A (en) | Field effect semiconductor device |