JPS5563873A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5563873A
JPS5563873A JP13692578A JP13692578A JPS5563873A JP S5563873 A JPS5563873 A JP S5563873A JP 13692578 A JP13692578 A JP 13692578A JP 13692578 A JP13692578 A JP 13692578A JP S5563873 A JPS5563873 A JP S5563873A
Authority
JP
Japan
Prior art keywords
integrated circuit
channel
gate
raise
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13692578A
Other languages
Japanese (ja)
Inventor
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP13692578A priority Critical patent/JPS5563873A/en
Publication of JPS5563873A publication Critical patent/JPS5563873A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Abstract

PURPOSE:To raise the dielectric strength and reduce power consumption, by decreasing the concentration of both or one of P channel and N channel substrates of a CMOS integrated circuit and making the gate electrodes of a double-channel transistor into the same diffusion type. CONSTITUTION:A CMOS integrated circuit has a P well with a concentration of about 10<15>cm<-3> in an N<-> substrate 98 of 10<14>-10<15>cm<-3>. P<+> diffused layers 99, 100 for manufacturing a transistor of an ordinary part and P<+> diffused layers 101-103 of a part of high dielectric strength are simultaneously produced in the N<-> substrate 98. A gate film 111 and a field film 112 are then produced. Gate electrodes 108-110 are provided. Pinch resistors 104-107 are manufactured in offset portions by ion implantation. Doping to a gate silicon is performed entirely in the N<+>-type to raise a threshold value by about 1V. Enhancement is thus effected.
JP13692578A 1978-11-07 1978-11-07 Semiconductor integrated circuit Pending JPS5563873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13692578A JPS5563873A (en) 1978-11-07 1978-11-07 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13692578A JPS5563873A (en) 1978-11-07 1978-11-07 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5563873A true JPS5563873A (en) 1980-05-14

Family

ID=15186770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13692578A Pending JPS5563873A (en) 1978-11-07 1978-11-07 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5563873A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732665A (en) * 1980-08-06 1982-02-22 Seiko Epson Corp Complementary type integrated circuit
JPS586162A (en) * 1981-07-02 1983-01-13 Seiko Epson Corp Semiconductor device
JPS62134974A (en) * 1985-12-04 1987-06-18 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド Field effect device
JPS62200757A (en) * 1986-02-28 1987-09-04 Toshiba Corp Mos-type semiconductor device
JPH04115538A (en) * 1990-09-05 1992-04-16 Mitsubishi Electric Corp Semiconductor device
US7285838B2 (en) 2005-01-06 2007-10-23 Fujitsu Limited Semiconductor device and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960482A (en) * 1972-10-12 1974-06-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960482A (en) * 1972-10-12 1974-06-12

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732665A (en) * 1980-08-06 1982-02-22 Seiko Epson Corp Complementary type integrated circuit
JPS586162A (en) * 1981-07-02 1983-01-13 Seiko Epson Corp Semiconductor device
JPS62134974A (en) * 1985-12-04 1987-06-18 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド Field effect device
JPS62200757A (en) * 1986-02-28 1987-09-04 Toshiba Corp Mos-type semiconductor device
JPH0324070B2 (en) * 1986-02-28 1991-04-02 Toshiba Kk
JPH04115538A (en) * 1990-09-05 1992-04-16 Mitsubishi Electric Corp Semiconductor device
US7285838B2 (en) 2005-01-06 2007-10-23 Fujitsu Limited Semiconductor device and method of manufacturing the same
US7419864B2 (en) 2005-01-06 2008-09-02 Fujitsu Limited Semiconductor device and method of manufacturing the same

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