JPS5563873A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5563873A JPS5563873A JP13692578A JP13692578A JPS5563873A JP S5563873 A JPS5563873 A JP S5563873A JP 13692578 A JP13692578 A JP 13692578A JP 13692578 A JP13692578 A JP 13692578A JP S5563873 A JPS5563873 A JP S5563873A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- channel
- gate
- raise
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To raise the dielectric strength and reduce power consumption, by decreasing the concentration of both or one of P channel and N channel substrates of a CMOS integrated circuit and making the gate electrodes of a double-channel transistor into the same diffusion type. CONSTITUTION:A CMOS integrated circuit has a P well with a concentration of about 10<15>cm<-3> in an N<-> substrate 98 of 10<14>-10<15>cm<-3>. P<+> diffused layers 99, 100 for manufacturing a transistor of an ordinary part and P<+> diffused layers 101-103 of a part of high dielectric strength are simultaneously produced in the N<-> substrate 98. A gate film 111 and a field film 112 are then produced. Gate electrodes 108-110 are provided. Pinch resistors 104-107 are manufactured in offset portions by ion implantation. Doping to a gate silicon is performed entirely in the N<+>-type to raise a threshold value by about 1V. Enhancement is thus effected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13692578A JPS5563873A (en) | 1978-11-07 | 1978-11-07 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13692578A JPS5563873A (en) | 1978-11-07 | 1978-11-07 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5563873A true JPS5563873A (en) | 1980-05-14 |
Family
ID=15186770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13692578A Pending JPS5563873A (en) | 1978-11-07 | 1978-11-07 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5563873A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5732665A (en) * | 1980-08-06 | 1982-02-22 | Seiko Epson Corp | Complementary type integrated circuit |
JPS586162A (en) * | 1981-07-02 | 1983-01-13 | Seiko Epson Corp | Semiconductor device |
JPS62134974A (en) * | 1985-12-04 | 1987-06-18 | アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド | Field effect device |
JPS62200757A (en) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Mos-type semiconductor device |
JPH04115538A (en) * | 1990-09-05 | 1992-04-16 | Mitsubishi Electric Corp | Semiconductor device |
US7285838B2 (en) | 2005-01-06 | 2007-10-23 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4960482A (en) * | 1972-10-12 | 1974-06-12 |
-
1978
- 1978-11-07 JP JP13692578A patent/JPS5563873A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4960482A (en) * | 1972-10-12 | 1974-06-12 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5732665A (en) * | 1980-08-06 | 1982-02-22 | Seiko Epson Corp | Complementary type integrated circuit |
JPS586162A (en) * | 1981-07-02 | 1983-01-13 | Seiko Epson Corp | Semiconductor device |
JPS62134974A (en) * | 1985-12-04 | 1987-06-18 | アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド | Field effect device |
JPS62200757A (en) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Mos-type semiconductor device |
JPH0324070B2 (en) * | 1986-02-28 | 1991-04-02 | Toshiba Kk | |
JPH04115538A (en) * | 1990-09-05 | 1992-04-16 | Mitsubishi Electric Corp | Semiconductor device |
US7285838B2 (en) | 2005-01-06 | 2007-10-23 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
US7419864B2 (en) | 2005-01-06 | 2008-09-02 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
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