JPS5572079A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5572079A JPS5572079A JP14622278A JP14622278A JPS5572079A JP S5572079 A JPS5572079 A JP S5572079A JP 14622278 A JP14622278 A JP 14622278A JP 14622278 A JP14622278 A JP 14622278A JP S5572079 A JPS5572079 A JP S5572079A
- Authority
- JP
- Japan
- Prior art keywords
- type
- film
- substrate
- region
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To facilitate the concentration of low impurities and heighten the drain voltage resistance by forming a channel of the depression type element or the like using a mask layer covering the entire gate electrode of the enhancement type MIS type semiconductor element.
CONSTITUTION: A p-type Si substrate 11 is provided with a p+-type channel cut region 12 which is covered with a thick field SiO2 film 13. The surface of the substrate 11 exposed between the region and film is covered with a thin gate SiO2 film 14. Then, gate electrodes 15E and 15D each made of a polycrystaline Si are provided at the central part thereof. With the film 14 as the mask, an n-type source region 16E and drain region 17E, 16D, and 17D are individually formed by diffusion in the substrate 11. Thereafter, one electrode 15E alone of the enhancement type element is entirely covered with a photo resist 18 while ion is injected under the other electrode 15 alone whereby an n-type channel 19 is formed. An n-type impurity is injected to give a step between the regions 16E and 17E while the regions 16D and 17D are made deeper as it is.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14622278A JPS5572079A (en) | 1978-11-27 | 1978-11-27 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14622278A JPS5572079A (en) | 1978-11-27 | 1978-11-27 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5572079A true JPS5572079A (en) | 1980-05-30 |
Family
ID=15402863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14622278A Pending JPS5572079A (en) | 1978-11-27 | 1978-11-27 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5572079A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4639892A (en) * | 1982-11-30 | 1987-01-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor read-only memory device |
-
1978
- 1978-11-27 JP JP14622278A patent/JPS5572079A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4639892A (en) * | 1982-11-30 | 1987-01-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor read-only memory device |
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