JPS55146976A - Insulating gate field effect transistor - Google Patents

Insulating gate field effect transistor

Info

Publication number
JPS55146976A
JPS55146976A JP5464679A JP5464679A JPS55146976A JP S55146976 A JPS55146976 A JP S55146976A JP 5464679 A JP5464679 A JP 5464679A JP 5464679 A JP5464679 A JP 5464679A JP S55146976 A JPS55146976 A JP S55146976A
Authority
JP
Japan
Prior art keywords
region
concave
type
gate electrode
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5464679A
Other versions
JPS6159666B2 (en
Inventor
Kenji Hideshima
Tetsuo Ichikawa
Kuniharu Kato
Yuki Shimada
Original Assignee
Nec Corp
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp, Nippon Telegr & Teleph Corp <Ntt> filed Critical Nec Corp
Priority to JP54054646A priority Critical patent/JPS6159666B2/ja
Publication of JPS55146976A publication Critical patent/JPS55146976A/en
Publication of JPS6159666B2 publication Critical patent/JPS6159666B2/ja
Application status is Expired legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095Body region, i.e. base region, of DMOS transistors or IGBTs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356Disposition, e.g. buried gate electrode
    • H01L29/4236Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Abstract

PURPOSE:To heighten the withstand voltage on reducing ''on'' resistance by attaching the gate electrode, which makes up the IGFET, to a concave in the central part of the source region through an insulating film and by providing a back gate electrode in the isolated region. CONSTITUTION:The N-type layer 102 is grown on the N<+>-type Si substrate 101 that is to be the drain region, the shallow P-type egion 103 the end edge of which is surrounded by the deep P<+>-type regions 110-1, 110-2 formed in the layer 102 by a diffusion method. Next the N+-type source region 104 is produced in the region 103 by a diffusion method, the concave 105 that reaches the layer 102 is formed in the central part of the region 104, and the entire surface that includes the convave is coated with SiO2 film. After this, windows are opened in the film on the region 104 to mount the Al source electrodes 108 on the region 104. And the Al gate electrode 107 is attached to the concave 107 by using the film, which is previously provided on the concave, as the gate insulating film 106. Also the back gate electrode 111 is mounted on the region 110-2 and the Au drain electrode 109 is attached to the back of the substrate 101.
JP54054646A 1979-05-02 1979-05-02 Expired JPS6159666B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54054646A JPS6159666B2 (en) 1979-05-02 1979-05-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54054646A JPS6159666B2 (en) 1979-05-02 1979-05-02

Publications (2)

Publication Number Publication Date
JPS55146976A true JPS55146976A (en) 1980-11-15
JPS6159666B2 JPS6159666B2 (en) 1986-12-17

Family

ID=12976534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54054646A Expired JPS6159666B2 (en) 1979-05-02 1979-05-02

Country Status (1)

Country Link
JP (1) JPS6159666B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
JPS63213969A (en) * 1987-03-03 1988-09-06 Nec Corp Semiconductor integrated circuit device and manufacture thereof
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
US5296727A (en) * 1990-08-24 1994-03-22 Fujitsu Limited Double gate FET and process for manufacturing same
US5532179A (en) * 1992-07-24 1996-07-02 Siliconix Incorporated Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof
US5558313A (en) * 1992-07-24 1996-09-24 Siliconix Inorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
US5877538A (en) * 1995-06-02 1999-03-02 Silixonix Incorporated Bidirectional trench gated power MOSFET with submerged body bus extending underneath gate trench
US5923979A (en) * 1997-09-03 1999-07-13 Siliconix Incorporated Planar DMOS transistor fabricated by a three mask process
US6096608A (en) * 1997-06-30 2000-08-01 Siliconix Incorporated Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench
US6627950B1 (en) 1988-12-27 2003-09-30 Siliconix, Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015004883A1 (en) * 2013-07-11 2015-01-15 パナソニックIpマネジメント株式会社 Semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
JPS63213969A (en) * 1987-03-03 1988-09-06 Nec Corp Semiconductor integrated circuit device and manufacture thereof
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
US6627950B1 (en) 1988-12-27 2003-09-30 Siliconix, Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5296727A (en) * 1990-08-24 1994-03-22 Fujitsu Limited Double gate FET and process for manufacturing same
US5532179A (en) * 1992-07-24 1996-07-02 Siliconix Incorporated Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof
US5910669A (en) * 1992-07-24 1999-06-08 Siliconix Incorporated Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
US5981344A (en) * 1992-07-24 1999-11-09 Siliconix Incorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
US5558313A (en) * 1992-07-24 1996-09-24 Siliconix Inorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
US5877538A (en) * 1995-06-02 1999-03-02 Silixonix Incorporated Bidirectional trench gated power MOSFET with submerged body bus extending underneath gate trench
US6096608A (en) * 1997-06-30 2000-08-01 Siliconix Incorporated Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench
US5923979A (en) * 1997-09-03 1999-07-13 Siliconix Incorporated Planar DMOS transistor fabricated by a three mask process

Also Published As

Publication number Publication date
JPS6159666B2 (en) 1986-12-17

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