JPS5732665A - Complementary type integrated circuit - Google Patents

Complementary type integrated circuit

Info

Publication number
JPS5732665A
JPS5732665A JP10788580A JP10788580A JPS5732665A JP S5732665 A JPS5732665 A JP S5732665A JP 10788580 A JP10788580 A JP 10788580A JP 10788580 A JP10788580 A JP 10788580A JP S5732665 A JPS5732665 A JP S5732665A
Authority
JP
Japan
Prior art keywords
drain
mosfet122
mosfet112
mosfet111
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10788580A
Other languages
Japanese (ja)
Inventor
Toshiyuki Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP10788580A priority Critical patent/JPS5732665A/en
Publication of JPS5732665A publication Critical patent/JPS5732665A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the speed of response of an interface circuit by inserting a semiconductor forming a resistor between the drains of a field-effect transistor. CONSTITUTION:A FET row obtained by connecting in series a metallic oxide film semiconductor field-effect transistor MOSFET111 with the first conduction type and an MOSFET122 with second conduction type and a FET row acquired by connecting an MOSFET112 and the MOSFET122 in series are connected in parallel. A gate of an MOSFET121 is connected to the drain of the MOSFET112 and a gate of the MOSFET122 to the drain of the MOSFET111. The semiconductor layers 201, 202 forming resistors are shaped between the drain of the MOSFET111 and the drain of the MOSFET121 and between the drain of the MOSFET112 and the drain of the MOSFET122.
JP10788580A 1980-08-06 1980-08-06 Complementary type integrated circuit Pending JPS5732665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10788580A JPS5732665A (en) 1980-08-06 1980-08-06 Complementary type integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10788580A JPS5732665A (en) 1980-08-06 1980-08-06 Complementary type integrated circuit

Publications (1)

Publication Number Publication Date
JPS5732665A true JPS5732665A (en) 1982-02-22

Family

ID=14470539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10788580A Pending JPS5732665A (en) 1980-08-06 1980-08-06 Complementary type integrated circuit

Country Status (1)

Country Link
JP (1) JPS5732665A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60110447A (en) * 1983-11-21 1985-06-15 五洋紙工株式会社 Manufacture of laminated composite body with viewing window

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347278A (en) * 1976-10-12 1978-04-27 Toshiba Corp Insulated gate type field effect transistor
JPS5563873A (en) * 1978-11-07 1980-05-14 Seiko Epson Corp Semiconductor integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347278A (en) * 1976-10-12 1978-04-27 Toshiba Corp Insulated gate type field effect transistor
JPS5563873A (en) * 1978-11-07 1980-05-14 Seiko Epson Corp Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60110447A (en) * 1983-11-21 1985-06-15 五洋紙工株式会社 Manufacture of laminated composite body with viewing window
JPH041694B2 (en) * 1983-11-21 1992-01-14 Goyo Shiko Kk

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