JPS56129359A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS56129359A
JPS56129359A JP9468480A JP9468480A JPS56129359A JP S56129359 A JPS56129359 A JP S56129359A JP 9468480 A JP9468480 A JP 9468480A JP 9468480 A JP9468480 A JP 9468480A JP S56129359 A JPS56129359 A JP S56129359A
Authority
JP
Japan
Prior art keywords
film
region
resistant
transistor
resistant region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9468480A
Other languages
Japanese (ja)
Other versions
JPS5834938B2 (en
Inventor
Takashi Hirao
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55094684A priority Critical patent/JPS5834938B2/en
Publication of JPS56129359A publication Critical patent/JPS56129359A/en
Publication of JPS5834938B2 publication Critical patent/JPS5834938B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To readily obtain a transistor incorporating a part with high resistance by a method wherein a resisting element with high resistance, a region with low resistance and a transistor each continuously contacting the element are formed in one body on a polycrystalline Si film. CONSTITUTION:A polycrystalline Si film and a heat-oxidized film or a CVD film 6 are formed on an N type Si substrate 1 formed with an Si oxide film 2 and a gate oxide film 4. Next the film 6 to become a load resistant region only on a film 5 is allowed to remain and the rest is removed. Then all other films 55 excluding only portion on the film 4 of the driver MOS transistor Tr and the film 5 of the load resistant element are removed to form diffusion windows 7, 7'. This is followed by the formation of source-drain regions 8, 8', a gate electrode 5', a low resistant region 5'' continuously connected with the resistant region and low resistant region by introducing P type impurities in such a way as is indicated by an arrow. Furthermore, ions are injected in such a way as is shown by a Y arrow to the film 5 under the film 6 through the film 6 to form a high resistant region 9. By so doing, it becomes possible to readily obtain a body in which the region 9 and the region 5'' continuously contacting the region 9 and an MOS Tr using these regions as a load resistor have been formed in one unit.
JP55094684A 1980-07-10 1980-07-10 Manufacturing method of semiconductor device Expired JPS5834938B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55094684A JPS5834938B2 (en) 1980-07-10 1980-07-10 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55094684A JPS5834938B2 (en) 1980-07-10 1980-07-10 Manufacturing method of semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP6217272A Division JPS5710578B2 (en) 1972-06-20 1972-06-20

Publications (2)

Publication Number Publication Date
JPS56129359A true JPS56129359A (en) 1981-10-09
JPS5834938B2 JPS5834938B2 (en) 1983-07-29

Family

ID=14117026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55094684A Expired JPS5834938B2 (en) 1980-07-10 1980-07-10 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5834938B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148444A (en) * 1982-03-01 1983-09-03 Matsushita Electric Ind Co Ltd Manufacture of integrated circuit
JPS58219759A (en) * 1982-06-15 1983-12-21 Oki Electric Ind Co Ltd Manufacture of polycrystalline silicon resistor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0339474Y2 (en) * 1984-10-02 1991-08-20
JPS6293349U (en) * 1985-12-03 1987-06-15
JPS6342142U (en) * 1986-09-01 1988-03-19
JPH0183051U (en) * 1987-11-19 1989-06-02

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48112274U (en) * 1972-03-29 1973-12-22
JPS4922871A (en) * 1972-06-20 1974-02-28
JPS5324290A (en) * 1976-08-18 1978-03-06 Nec Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48112274U (en) * 1972-03-29 1973-12-22
JPS4922871A (en) * 1972-06-20 1974-02-28
JPS5324290A (en) * 1976-08-18 1978-03-06 Nec Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148444A (en) * 1982-03-01 1983-09-03 Matsushita Electric Ind Co Ltd Manufacture of integrated circuit
JPS58219759A (en) * 1982-06-15 1983-12-21 Oki Electric Ind Co Ltd Manufacture of polycrystalline silicon resistor

Also Published As

Publication number Publication date
JPS5834938B2 (en) 1983-07-29

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