JPS644070A - Thin film transistor and manufacture thereof - Google Patents
Thin film transistor and manufacture thereofInfo
- Publication number
- JPS644070A JPS644070A JP15766787A JP15766787A JPS644070A JP S644070 A JPS644070 A JP S644070A JP 15766787 A JP15766787 A JP 15766787A JP 15766787 A JP15766787 A JP 15766787A JP S644070 A JPS644070 A JP S644070A
- Authority
- JP
- Japan
- Prior art keywords
- film
- siox
- gate electrode
- electrode
- sin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 12
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To upgrade mobility of a TFT and to suppress fluctuation in a threshold voltage, by oxidizing a surface of an SiN film which is an insulating film for a gate electrode and then forming an a-Si film of a semiconductor film. CONSTITUTION:A gate electrode 12, a gate electrode's insulating film 13 composed of an SiN film 13a and an SiOX film 13b, a semiconductor film 14 made of a-Si, an n-type a-Si 14' doped with phosphorus, a drain electrode 15 made of Cr 17 and Al 18, and a source electrode 6 made of Cr 15 and Al 18 are disposed serially on an insulating substrate 11 made of a glass plate or the like so that a thin film transistor TFT is formed. Said N<+> a-Si film 14' is formed to decrease a contact resistance of the electrode. Silicon dioxide of stoichiometric composition is not necessarily used in the SiOX film, but it is desirable that hydrogen and nitrogen are contained and its composition is defined with a range of 1.95<=x<=2.35. It is also desirable that only a surface layer of the SiN film is made of SiOX and its thickness is so at least 1nm to be a half or less of the SiN film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15766787A JPS644070A (en) | 1987-06-26 | 1987-06-26 | Thin film transistor and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15766787A JPS644070A (en) | 1987-06-26 | 1987-06-26 | Thin film transistor and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS644070A true JPS644070A (en) | 1989-01-09 |
Family
ID=15654748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15766787A Pending JPS644070A (en) | 1987-06-26 | 1987-06-26 | Thin film transistor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS644070A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332606A (en) * | 2005-04-28 | 2006-12-07 | Semiconductor Energy Lab Co Ltd | Method for manufacturing thin-film transistor, display device using the thin-film transistor, electronic apparatus incorporating the display device |
| JP2010245438A (en) * | 2009-04-09 | 2010-10-28 | Mitsubishi Electric Corp | Thin film transistor, display device, and manufacturing method therefor |
| WO2011080957A1 (en) * | 2009-12-29 | 2011-07-07 | シャープ株式会社 | Thin film transistor, method for manufacturing same, and display apparatus |
| JP2012064957A (en) * | 2005-04-28 | 2012-03-29 | Semiconductor Energy Lab Co Ltd | Manufacturing method for semiconductor device |
| JP2012099847A (en) * | 2012-01-13 | 2012-05-24 | Sony Corp | Method for manufacturing thin film transistor substrate |
| JP2015062235A (en) * | 2009-06-26 | 2015-04-02 | 株式会社半導体エネルギー研究所 | Method of manufacturing semiconductor device and semiconductor device |
| JP2016026403A (en) * | 2010-08-26 | 2016-02-12 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147070A (en) * | 1982-02-25 | 1983-09-01 | Mitsubishi Electric Corp | Field effect transistor and manufacture thereof |
| JPS6014473A (en) * | 1983-07-05 | 1985-01-25 | Asahi Glass Co Ltd | Electrode structure for thin film transistor |
| JPS60235467A (en) * | 1984-05-09 | 1985-11-22 | Hitachi Ltd | Manufacture of thin-film transistor |
-
1987
- 1987-06-26 JP JP15766787A patent/JPS644070A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147070A (en) * | 1982-02-25 | 1983-09-01 | Mitsubishi Electric Corp | Field effect transistor and manufacture thereof |
| JPS6014473A (en) * | 1983-07-05 | 1985-01-25 | Asahi Glass Co Ltd | Electrode structure for thin film transistor |
| JPS60235467A (en) * | 1984-05-09 | 1985-11-22 | Hitachi Ltd | Manufacture of thin-film transistor |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332606A (en) * | 2005-04-28 | 2006-12-07 | Semiconductor Energy Lab Co Ltd | Method for manufacturing thin-film transistor, display device using the thin-film transistor, electronic apparatus incorporating the display device |
| JP2012064957A (en) * | 2005-04-28 | 2012-03-29 | Semiconductor Energy Lab Co Ltd | Manufacturing method for semiconductor device |
| US8318554B2 (en) | 2005-04-28 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming gate insulating film for thin film transistors using plasma oxidation |
| JP2010245438A (en) * | 2009-04-09 | 2010-10-28 | Mitsubishi Electric Corp | Thin film transistor, display device, and manufacturing method therefor |
| JP2015062235A (en) * | 2009-06-26 | 2015-04-02 | 株式会社半導体エネルギー研究所 | Method of manufacturing semiconductor device and semiconductor device |
| WO2011080957A1 (en) * | 2009-12-29 | 2011-07-07 | シャープ株式会社 | Thin film transistor, method for manufacturing same, and display apparatus |
| US8717340B2 (en) | 2009-12-29 | 2014-05-06 | Sharp Kabushiki Kaisha | Thin film transistor, method for manufacturing same, and display apparatus |
| JP2016026403A (en) * | 2010-08-26 | 2016-02-12 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP2012099847A (en) * | 2012-01-13 | 2012-05-24 | Sony Corp | Method for manufacturing thin film transistor substrate |
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