JPS567480A - Film transistor - Google Patents

Film transistor

Info

Publication number
JPS567480A
JPS567480A JP8371279A JP8371279A JPS567480A JP S567480 A JPS567480 A JP S567480A JP 8371279 A JP8371279 A JP 8371279A JP 8371279 A JP8371279 A JP 8371279A JP S567480 A JPS567480 A JP S567480A
Authority
JP
Japan
Prior art keywords
film
amorphous
layer
light barrier
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8371279A
Other languages
Japanese (ja)
Other versions
JPH0212031B2 (en
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8371279A priority Critical patent/JPS567480A/en
Publication of JPS567480A publication Critical patent/JPS567480A/en
Publication of JPH0212031B2 publication Critical patent/JPH0212031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a film transistor which causes no erroneous action by using an amorphous Si layer as an active semiconductor region and providing light barrier layer consisting similarly of amorphous Si on both surfaces of the above layer. CONSTITUTION:The first light barrier film 14 consisting of amorphous Si formed by doping 0.1% or more of impurities is formed on a transparent substrate 11 such as glass or the like. The full surface of the above film is coated with the first insulating film 15. Then, a source electrode 6 and a drain electrode 7 are provided at a suitable interval on the film 15. While burying the space between these electrodes, an amorphous Si active layer 12 including H2 from several % to several tens % on its full surface and having a uniform thickness is stacked by glow discharge or the like. Thereafter, the surface is again coated with the second insulating film 13, on which a gate electrode 5 corresponding to the electrodes 6 and 7 is mounted. The second amorphous Si light barrier film 16 is formed on both sides of the above gate electrode 5 while positioning on the film 13. By this procedure, when this transistor is used in a liquid crystal display device, no erroneous action due to irradiation of light occurs.
JP8371279A 1979-06-29 1979-06-29 Film transistor Granted JPS567480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8371279A JPS567480A (en) 1979-06-29 1979-06-29 Film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8371279A JPS567480A (en) 1979-06-29 1979-06-29 Film transistor

Publications (2)

Publication Number Publication Date
JPS567480A true JPS567480A (en) 1981-01-26
JPH0212031B2 JPH0212031B2 (en) 1990-03-16

Family

ID=13810106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8371279A Granted JPS567480A (en) 1979-06-29 1979-06-29 Film transistor

Country Status (1)

Country Link
JP (1) JPS567480A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134476A (en) * 1982-02-05 1983-08-10 Mitsubishi Electric Corp Thin film transistor
JPS58147070A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Field effect transistor and manufacture thereof
JPS59117267A (en) * 1982-12-24 1984-07-06 Seiko Instr & Electronics Ltd Thin film transistor
JPS59204274A (en) * 1983-05-06 1984-11-19 Seiko Instr & Electronics Ltd Thin film transistor
EP0197531A2 (en) * 1985-04-08 1986-10-15 Hitachi, Ltd. Thin film transistor formed on insulating substrate
US4963503A (en) * 1984-04-09 1990-10-16 Hosiden Electronics Co., Ltd. Method of manufacturing liquid crystal display device
US5844647A (en) * 1996-02-09 1998-12-01 Kabushiki Kaisha Toshiba Liquid crystal display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226876A (en) * 1975-08-25 1977-02-28 Hewlett Packard Yokogawa Frequency detector
JPS5375784A (en) * 1976-12-16 1978-07-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPS5375785A (en) * 1976-12-16 1978-07-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226876A (en) * 1975-08-25 1977-02-28 Hewlett Packard Yokogawa Frequency detector
JPS5375784A (en) * 1976-12-16 1978-07-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPS5375785A (en) * 1976-12-16 1978-07-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134476A (en) * 1982-02-05 1983-08-10 Mitsubishi Electric Corp Thin film transistor
JPS58147070A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Field effect transistor and manufacture thereof
JPH023308B2 (en) * 1982-02-25 1990-01-23 Mitsubishi Electric Corp
JPS59117267A (en) * 1982-12-24 1984-07-06 Seiko Instr & Electronics Ltd Thin film transistor
JPS59204274A (en) * 1983-05-06 1984-11-19 Seiko Instr & Electronics Ltd Thin film transistor
US4963503A (en) * 1984-04-09 1990-10-16 Hosiden Electronics Co., Ltd. Method of manufacturing liquid crystal display device
EP0197531A2 (en) * 1985-04-08 1986-10-15 Hitachi, Ltd. Thin film transistor formed on insulating substrate
US4954855A (en) * 1985-04-08 1990-09-04 Hitachi, Ltd. Thin film transistor formed on insulating substrate
US5844647A (en) * 1996-02-09 1998-12-01 Kabushiki Kaisha Toshiba Liquid crystal display device

Also Published As

Publication number Publication date
JPH0212031B2 (en) 1990-03-16

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