JPS6437535A - Thin film semiconductor element - Google Patents
Thin film semiconductor elementInfo
- Publication number
- JPS6437535A JPS6437535A JP62193541A JP19354187A JPS6437535A JP S6437535 A JPS6437535 A JP S6437535A JP 62193541 A JP62193541 A JP 62193541A JP 19354187 A JP19354187 A JP 19354187A JP S6437535 A JPS6437535 A JP S6437535A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- insulating layer
- wiring
- shorting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To prevent the shorting in the crossed parts of the wiring of a 1st electrode and the wiring of a 2nd electrode while averting the complication of stages by forming a 1st insulating layer and the 1st electrode to substantially equal thicknesses and laminating a 2nd insulating layer thereon. CONSTITUTION:The insulating film 3 consisting of silicon nitride (SiNx) is formed atop a glass substrate 1. The 1st insulating layer 3a constituting the lower layer of the insulating film 3 has the same layer thickness as the layer thickness of the gate electrode 2 and the surfaces of the gate electrode 2 and the 1st insulating layer 3a are flat. The 2nd insulating layer 3b constituting the upper layer is formed atop the same. An a-Si:H (amorphous silicon added with hydrogen atom) semiconductor layer 4 and an n<+>a-Si:H ohmic contact layer 5 are successively laminated and formed in this order on the insulating film 3. Since the 2nd insulating layer 3b is formed flatly on the 1st electrode 2 and the 1st insulating layer 3a in such a manner, the shorting between the 1st electrode 2 and the 2nd electrode 7 is no longer generated and the number of shorting in the crossed parts between the wiring of the gate electrode 2 and the wiring of the drain electrode 7 is decreased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62193541A JPS6437535A (en) | 1987-07-31 | 1987-07-31 | Thin film semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62193541A JPS6437535A (en) | 1987-07-31 | 1987-07-31 | Thin film semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6437535A true JPS6437535A (en) | 1989-02-08 |
Family
ID=16309787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62193541A Pending JPS6437535A (en) | 1987-07-31 | 1987-07-31 | Thin film semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6437535A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100277501B1 (en) * | 1998-02-16 | 2001-01-15 | 윤종용 | LCD and its manufacturing method |
| KR100333983B1 (en) * | 1999-05-13 | 2002-04-26 | 윤종용 | thin film transistor array panel for liquid crystal display having wide viewing angle and manufacturing method thereof |
| KR100333984B1 (en) * | 1999-06-03 | 2002-04-26 | 윤종용 | Liquid crystal display and manufacturing method thereof |
| KR100351874B1 (en) * | 1999-09-14 | 2002-09-12 | 엘지.필립스 엘시디 주식회사 | Thin film transistor liquid crystal display device |
| WO2006117907A1 (en) * | 2005-04-28 | 2006-11-09 | Sharp Kabushiki Kaisha | Methods for manufacturing semiconductor element and circuit board, and semiconductor element and circuit board |
| WO2006117909A1 (en) * | 2005-04-28 | 2006-11-09 | Sharp Kabushiki Kaisha | Pattern thin film, method for manufacturing semiconductor element and circuit board, resist material, semiconductor element and circuit board |
| US7961263B2 (en) | 1997-11-20 | 2011-06-14 | Samsung Electronics Co., Ltd. | Liquid crystal displays and manufacturing methods thereof |
-
1987
- 1987-07-31 JP JP62193541A patent/JPS6437535A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7961263B2 (en) | 1997-11-20 | 2011-06-14 | Samsung Electronics Co., Ltd. | Liquid crystal displays and manufacturing methods thereof |
| KR100277501B1 (en) * | 1998-02-16 | 2001-01-15 | 윤종용 | LCD and its manufacturing method |
| KR100333983B1 (en) * | 1999-05-13 | 2002-04-26 | 윤종용 | thin film transistor array panel for liquid crystal display having wide viewing angle and manufacturing method thereof |
| KR100333984B1 (en) * | 1999-06-03 | 2002-04-26 | 윤종용 | Liquid crystal display and manufacturing method thereof |
| KR100351874B1 (en) * | 1999-09-14 | 2002-09-12 | 엘지.필립스 엘시디 주식회사 | Thin film transistor liquid crystal display device |
| WO2006117907A1 (en) * | 2005-04-28 | 2006-11-09 | Sharp Kabushiki Kaisha | Methods for manufacturing semiconductor element and circuit board, and semiconductor element and circuit board |
| WO2006117909A1 (en) * | 2005-04-28 | 2006-11-09 | Sharp Kabushiki Kaisha | Pattern thin film, method for manufacturing semiconductor element and circuit board, resist material, semiconductor element and circuit board |
| US8283218B2 (en) | 2005-04-28 | 2012-10-09 | Sharp Kabushiki Kaisha | Production methods of a patterned thin film, semiconductor element, and circuit substrate using fluid resist material |
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