JPS5683080A - Schottky-barrier-diode - Google Patents

Schottky-barrier-diode

Info

Publication number
JPS5683080A
JPS5683080A JP16056279A JP16056279A JPS5683080A JP S5683080 A JPS5683080 A JP S5683080A JP 16056279 A JP16056279 A JP 16056279A JP 16056279 A JP16056279 A JP 16056279A JP S5683080 A JPS5683080 A JP S5683080A
Authority
JP
Japan
Prior art keywords
schottky
barrier
electrode
diode
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16056279A
Other languages
Japanese (ja)
Inventor
Kenji Hideshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16056279A priority Critical patent/JPS5683080A/en
Publication of JPS5683080A publication Critical patent/JPS5683080A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To soften an impact of Al bonding, prevent the deterioration of the characteristics of a Schottky-barrier-biode and increase reliability by introducing a polycrystal silicon layer. CONSTITUTION:An insulating film layer 22 and Schottky-barrier forming metal 33 are formed onto a semiconductor substrate 21. A polycrystal silicon layer 24 doped in one conduction type and an Al electrode 25 are further made up. Al is bonded on an upper surface of the Al electrode 25. Ohmic contact metal 26 is built up for forming another electrode of a Schottky-barrier-diode.
JP16056279A 1979-12-11 1979-12-11 Schottky-barrier-diode Pending JPS5683080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16056279A JPS5683080A (en) 1979-12-11 1979-12-11 Schottky-barrier-diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16056279A JPS5683080A (en) 1979-12-11 1979-12-11 Schottky-barrier-diode

Publications (1)

Publication Number Publication Date
JPS5683080A true JPS5683080A (en) 1981-07-07

Family

ID=15717660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16056279A Pending JPS5683080A (en) 1979-12-11 1979-12-11 Schottky-barrier-diode

Country Status (1)

Country Link
JP (1) JPS5683080A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8484808B2 (en) 2008-10-10 2013-07-16 Kotobuki & Co., Ltd. Clip attachment structure for a writing instrument

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8484808B2 (en) 2008-10-10 2013-07-16 Kotobuki & Co., Ltd. Clip attachment structure for a writing instrument

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