JPS5727055A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5727055A JPS5727055A JP10279180A JP10279180A JPS5727055A JP S5727055 A JPS5727055 A JP S5727055A JP 10279180 A JP10279180 A JP 10279180A JP 10279180 A JP10279180 A JP 10279180A JP S5727055 A JPS5727055 A JP S5727055A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- sio2
- nitride film
- film
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 150000004767 nitrides Chemical class 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent the breaking of a stage of an electrode and the fusing of the electrode with drive by large currents by substantially forming the surface of a semiconductor layer and the surface of a protective film in the same plane. CONSTITUTION:A P type base region 11 and an N type emitter region 12 are shaped to an N type collector substrate 10 so that the surfaces are exposed, and a SiO2 film 14 is formed through thermal oxidation, using a nitride film 13 as a mask. The SiO2 film 14 is removed once, and SiO2 films 15 are shaped anew through thermal oxidation. In this case, the thickness of the SiO2 films is controlled so that the surface of the silicon substrate under the nitride film 13 and the surfaces of the SiO2 films 15 molded to sections except the nitride film section are the same height substantially. The nitride film 13 is removed, and an emitter-base electrode forming section is exposed. An aluminum electrode 16 is shaped. Accordingly, the aluminum electrode 16 is formed so as to be substantially extended on the same plane, and functions as an electrode having high reliability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10279180A JPS5727055A (en) | 1980-07-25 | 1980-07-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10279180A JPS5727055A (en) | 1980-07-25 | 1980-07-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5727055A true JPS5727055A (en) | 1982-02-13 |
Family
ID=14336930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10279180A Pending JPS5727055A (en) | 1980-07-25 | 1980-07-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5727055A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121158A (en) * | 1982-12-27 | 1984-07-13 | 日本碍子株式会社 | Polycrystal transparent spinel sintered body and manufacture |
| JPH06316412A (en) * | 1993-02-19 | 1994-11-15 | Daimler Benz Ag | Spinel consisting of mgal2o4 and method for synthesis thereof and use thereof |
-
1980
- 1980-07-25 JP JP10279180A patent/JPS5727055A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121158A (en) * | 1982-12-27 | 1984-07-13 | 日本碍子株式会社 | Polycrystal transparent spinel sintered body and manufacture |
| JPS6359985B2 (en) * | 1982-12-27 | 1988-11-22 | ||
| JPH06316412A (en) * | 1993-02-19 | 1994-11-15 | Daimler Benz Ag | Spinel consisting of mgal2o4 and method for synthesis thereof and use thereof |
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