JPS54153581A - Manufacture for thyristor - Google Patents

Manufacture for thyristor

Info

Publication number
JPS54153581A
JPS54153581A JP6297978A JP6297978A JPS54153581A JP S54153581 A JPS54153581 A JP S54153581A JP 6297978 A JP6297978 A JP 6297978A JP 6297978 A JP6297978 A JP 6297978A JP S54153581 A JPS54153581 A JP S54153581A
Authority
JP
Japan
Prior art keywords
conduction type
region
base region
conduction
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6297978A
Other languages
Japanese (ja)
Other versions
JPS5936433B2 (en
Inventor
Shigeki Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6297978A priority Critical patent/JPS5936433B2/en
Publication of JPS54153581A publication Critical patent/JPS54153581A/en
Publication of JPS5936433B2 publication Critical patent/JPS5936433B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To establish SCR's not affected with the variation in the gate trigger current, by constituting that the base region formed with gates exposed on the surface is not directly in touch with the silicon oxide film.
CONSTITUTION: The process (Fig. a) that the high impurity concentration region 5 of the first conduction type is formed on the surface from the first major surface of the semiconductor substrate formed from the said first major surface to sequentially the first conduction base region 4, second conduction type base region 1 and the first conduction type emitter region 3a respectively in contact, to the surface of the said first conduction type base region 4, except a given region, and the process that the high concentration impurity of the second conduction type is diffused on the said specified region of the surface of the first conduction type base region 4 and its surrounding, the second conduction type emitter region 7 is formed, and the second conduction type emitter regin 7 is partly in common use with the high impurity concentration region 5 of the said first conduction type, are provided.
COPYRIGHT: (C)1979,JPO&Japio
JP6297978A 1978-05-25 1978-05-25 Manufacturing method of thyristor Expired JPS5936433B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6297978A JPS5936433B2 (en) 1978-05-25 1978-05-25 Manufacturing method of thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6297978A JPS5936433B2 (en) 1978-05-25 1978-05-25 Manufacturing method of thyristor

Publications (2)

Publication Number Publication Date
JPS54153581A true JPS54153581A (en) 1979-12-03
JPS5936433B2 JPS5936433B2 (en) 1984-09-04

Family

ID=13215975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6297978A Expired JPS5936433B2 (en) 1978-05-25 1978-05-25 Manufacturing method of thyristor

Country Status (1)

Country Link
JP (1) JPS5936433B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57202779A (en) * 1981-06-08 1982-12-11 Toshiba Corp Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0225059Y2 (en) * 1985-01-17 1990-07-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57202779A (en) * 1981-06-08 1982-12-11 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5936433B2 (en) 1984-09-04

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