JPS54153581A - Manufacture for thyristor - Google Patents
Manufacture for thyristorInfo
- Publication number
- JPS54153581A JPS54153581A JP6297978A JP6297978A JPS54153581A JP S54153581 A JPS54153581 A JP S54153581A JP 6297978 A JP6297978 A JP 6297978A JP 6297978 A JP6297978 A JP 6297978A JP S54153581 A JPS54153581 A JP S54153581A
- Authority
- JP
- Japan
- Prior art keywords
- conduction type
- region
- base region
- conduction
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To establish SCR's not affected with the variation in the gate trigger current, by constituting that the base region formed with gates exposed on the surface is not directly in touch with the silicon oxide film.
CONSTITUTION: The process (Fig. a) that the high impurity concentration region 5 of the first conduction type is formed on the surface from the first major surface of the semiconductor substrate formed from the said first major surface to sequentially the first conduction base region 4, second conduction type base region 1 and the first conduction type emitter region 3a respectively in contact, to the surface of the said first conduction type base region 4, except a given region, and the process that the high concentration impurity of the second conduction type is diffused on the said specified region of the surface of the first conduction type base region 4 and its surrounding, the second conduction type emitter region 7 is formed, and the second conduction type emitter regin 7 is partly in common use with the high impurity concentration region 5 of the said first conduction type, are provided.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6297978A JPS5936433B2 (en) | 1978-05-25 | 1978-05-25 | Manufacturing method of thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6297978A JPS5936433B2 (en) | 1978-05-25 | 1978-05-25 | Manufacturing method of thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54153581A true JPS54153581A (en) | 1979-12-03 |
JPS5936433B2 JPS5936433B2 (en) | 1984-09-04 |
Family
ID=13215975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6297978A Expired JPS5936433B2 (en) | 1978-05-25 | 1978-05-25 | Manufacturing method of thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5936433B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57202779A (en) * | 1981-06-08 | 1982-12-11 | Toshiba Corp | Semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0225059Y2 (en) * | 1985-01-17 | 1990-07-10 |
-
1978
- 1978-05-25 JP JP6297978A patent/JPS5936433B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57202779A (en) * | 1981-06-08 | 1982-12-11 | Toshiba Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5936433B2 (en) | 1984-09-04 |
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