JPS5627964A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5627964A
JPS5627964A JP10358279A JP10358279A JPS5627964A JP S5627964 A JPS5627964 A JP S5627964A JP 10358279 A JP10358279 A JP 10358279A JP 10358279 A JP10358279 A JP 10358279A JP S5627964 A JPS5627964 A JP S5627964A
Authority
JP
Japan
Prior art keywords
region
base
main surface
base region
type conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10358279A
Other languages
Japanese (ja)
Inventor
Kazuo Hirano
Kenji Azetsubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10358279A priority Critical patent/JPS5627964A/en
Publication of JPS5627964A publication Critical patent/JPS5627964A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the breakdown durability and the reliability of the semiconductor device by forming P type diffused region shallower than a base region in high density including at least a base and collector junction in one main surface of a substrate. CONSTITUTION:The first P type conductivity base region 2 is formed by diffusion on one main surface of a collector region 1 as an N type conductivity substrate, and the second P type conductivity base region 12 equal to the base region 2 is then formed shallower than the base region 2 in high density including at least in one main surface a base and collector junction. Then, an emitter region 3 is formed by a selectively diffusing technique. Thereafter, openings are perforated at an SiO2 layer 4 on the main surface, and a base electrode 12a and an emitter elecctrode 3a are mounted therethrough.
JP10358279A 1979-08-16 1979-08-16 Semiconductor device Pending JPS5627964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10358279A JPS5627964A (en) 1979-08-16 1979-08-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10358279A JPS5627964A (en) 1979-08-16 1979-08-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5627964A true JPS5627964A (en) 1981-03-18

Family

ID=14357765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10358279A Pending JPS5627964A (en) 1979-08-16 1979-08-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5627964A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59128138U (en) * 1983-02-17 1984-08-29 株式会社東芝 Driving device for breaker

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59128138U (en) * 1983-02-17 1984-08-29 株式会社東芝 Driving device for breaker
JPS642345Y2 (en) * 1983-02-17 1989-01-19

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