JPS5530883A - Latral directioned transistor - Google Patents

Latral directioned transistor

Info

Publication number
JPS5530883A
JPS5530883A JP10476578A JP10476578A JPS5530883A JP S5530883 A JPS5530883 A JP S5530883A JP 10476578 A JP10476578 A JP 10476578A JP 10476578 A JP10476578 A JP 10476578A JP S5530883 A JPS5530883 A JP S5530883A
Authority
JP
Japan
Prior art keywords
shape
layer
base
resistance
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10476578A
Other languages
Japanese (ja)
Inventor
Koji Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10476578A priority Critical patent/JPS5530883A/en
Publication of JPS5530883A publication Critical patent/JPS5530883A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To reduce the bare spreading resistance and to improve the high-frequency characteristic by forming, in the surface part of collector adhesion and emitter adhesion part, high density impurities diffusion area of conductive shape same as a base layer at a small depth.
CONSTITUTION: A N- shape layer 2 in a P shape base plate 1, a P shape collector layer 3, a P shape emitter layer 4, a N+ shape base contact area 5, an embedded N+ shape layer 6 and a separating layer 7 are formed. A N+ shape diffusion layer 8 diffused in high density and shallowly the impurities of the conductive shape same as the N+ shape layer 2, is in contact with the N+ shape base contact area 5 and it is formed projecting up to the upper part of the collector layer 3 and the emitter layer 4. That is to say, a resistance r5 of this N+ shape diffusion layer 8 is considered to be connected in parallel to the resistance in series connection of r1, r2, r3 and r4. Thus, base spreading resistance can be reduced.
COPYRIGHT: (C)1980,JPO&Japio
JP10476578A 1978-08-28 1978-08-28 Latral directioned transistor Pending JPS5530883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10476578A JPS5530883A (en) 1978-08-28 1978-08-28 Latral directioned transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10476578A JPS5530883A (en) 1978-08-28 1978-08-28 Latral directioned transistor

Publications (1)

Publication Number Publication Date
JPS5530883A true JPS5530883A (en) 1980-03-04

Family

ID=14389565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10476578A Pending JPS5530883A (en) 1978-08-28 1978-08-28 Latral directioned transistor

Country Status (1)

Country Link
JP (1) JPS5530883A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972167A (en) * 1982-10-16 1984-04-24 Toko Inc Lateral p-n-p transistor
JPS5990957A (en) * 1982-11-16 1984-05-25 Toko Inc Lateral pnp transistor and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972167A (en) * 1982-10-16 1984-04-24 Toko Inc Lateral p-n-p transistor
JPS5990957A (en) * 1982-11-16 1984-05-25 Toko Inc Lateral pnp transistor and its manufacture

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