JPS5712552A - High dielectric resisting semiconductor device - Google Patents

High dielectric resisting semiconductor device

Info

Publication number
JPS5712552A
JPS5712552A JP8661580A JP8661580A JPS5712552A JP S5712552 A JPS5712552 A JP S5712552A JP 8661580 A JP8661580 A JP 8661580A JP 8661580 A JP8661580 A JP 8661580A JP S5712552 A JPS5712552 A JP S5712552A
Authority
JP
Japan
Prior art keywords
layer
emitter
base
semiconductor device
vebo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8661580A
Other languages
Japanese (ja)
Inventor
Shoji Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8661580A priority Critical patent/JPS5712552A/en
Publication of JPS5712552A publication Critical patent/JPS5712552A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To inhibit the dispersion of emitter dielectric resistance and base-emitter forward direction voltage, and to improve yield by surrounding the periphery of an N emitter layer by a shallow P<+> layer and a deep P<++> layer in order. CONSTITUTION:An N<+> Si substrate 1 is used as a collector, a P base layer 2 is stacked and the N<+> emitter layer 3 is formed on the surface. B ions are injected on the surface of the P base layer 2 of the periphery of the N<+> layer, the shallow P<+> layer 5 and the deep P<+> layer 6 are shaped, and the concentration of impurities is made approximately 10<15>atom/cm<3> in the layer 5 and approximately 10<20>atom/cm<3> in the layer 6. The surface of an N<+>P<+> junction and the surface of the P<+> layer 5 are coated with SiO2 7, and Al electrodes 8-10 are attached on the N<+> layer 3, the base connection layer 6 and the N<+> collector layer 1. According to this constitution, two antipodal electrical characteristics VEBO and Vf can be satisfied simultaneously, and low yield due to dispersion between Vf and VEBO is improved remarkably.
JP8661580A 1980-06-27 1980-06-27 High dielectric resisting semiconductor device Pending JPS5712552A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8661580A JPS5712552A (en) 1980-06-27 1980-06-27 High dielectric resisting semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8661580A JPS5712552A (en) 1980-06-27 1980-06-27 High dielectric resisting semiconductor device

Publications (1)

Publication Number Publication Date
JPS5712552A true JPS5712552A (en) 1982-01-22

Family

ID=13891917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8661580A Pending JPS5712552A (en) 1980-06-27 1980-06-27 High dielectric resisting semiconductor device

Country Status (1)

Country Link
JP (1) JPS5712552A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01282866A (en) * 1988-05-09 1989-11-14 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01282866A (en) * 1988-05-09 1989-11-14 Nec Corp Semiconductor device

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