JPS5752162A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5752162A
JPS5752162A JP12709780A JP12709780A JPS5752162A JP S5752162 A JPS5752162 A JP S5752162A JP 12709780 A JP12709780 A JP 12709780A JP 12709780 A JP12709780 A JP 12709780A JP S5752162 A JPS5752162 A JP S5752162A
Authority
JP
Japan
Prior art keywords
region
type
low resistance
base
injection method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12709780A
Other languages
Japanese (ja)
Inventor
Osamu Hataishi
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12709780A priority Critical patent/JPS5752162A/en
Publication of JPS5752162A publication Critical patent/JPS5752162A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a lateral bipolar transistor improved in the electric characteristic by forming a low resistance base region by an ion injection method under an emitter region. CONSTITUTION:Phosphorus ions are injected on a P type silicon substrate 1 to form an N type region 10, and a collector region 5, a base region 6 and an emitter region 7 are diffused in an N type region 10. A P<+> type low resistance layer 11 is formed by an ion injection method on the bottom of the base region, and a P<+> type region 12 for connecting the base electrode to the low resistance layer 11 is formed. In this manner, it can avoid the problem of crystalline defect in a lateral transistor and can obtain the lateral transistor having excellent characteristics.
JP12709780A 1980-09-16 1980-09-16 Semiconductor device Pending JPS5752162A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12709780A JPS5752162A (en) 1980-09-16 1980-09-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12709780A JPS5752162A (en) 1980-09-16 1980-09-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5752162A true JPS5752162A (en) 1982-03-27

Family

ID=14951504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12709780A Pending JPS5752162A (en) 1980-09-16 1980-09-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5752162A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170082453A (en) 2015-12-07 2017-07-14 산요 세이코 가부시키가이샤 Device for evaluating vascular elasticity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170082453A (en) 2015-12-07 2017-07-14 산요 세이코 가부시키가이샤 Device for evaluating vascular elasticity

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