JPS57118665A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS57118665A JPS57118665A JP56005705A JP570581A JPS57118665A JP S57118665 A JPS57118665 A JP S57118665A JP 56005705 A JP56005705 A JP 56005705A JP 570581 A JP570581 A JP 570581A JP S57118665 A JPS57118665 A JP S57118665A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- specific resistance
- power transistor
- circuit element
- signal circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000002542 deteriorative effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To improve the characteristics of the minor signal circuit element for the subject device without deteriorating the characteristics of a power transistor by a method wherein a double-layer epitaxial layer, having different specific resistance, is provided. CONSTITUTION:In the bipolar type integrated circuit element wherein a power transistor and a minor signal circuit element are constituted on the same chip, an N<-> layer 22 of a high specific resistance is provided on an N type silicon substrate 21, and an N-layer 23 of a low specific resistance is epitaxially grown on the above N-layer 22. Subsequently, a P type base region 24 is formed at the section where the power transistor will be formed, and then an N type emitter 25 is formed. Also, the minor signal circuit element is provided on the other region of the N-layer 23 of low specific resistance. Then, a contact hole is opened on an insulating layer 26, a base electrode, emitter electrodes 27 and 28 are formed, and then a collector 29 is provided on the reverse side of the substrate. Accordngly, the characteristics of the minor signal circuit can be improved without deteriorating the withstand voltage characteristics of the power transistor.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56005705A JPS57118665A (en) | 1981-01-16 | 1981-01-16 | Semiconductor integrated circuit device |
DE19813117837 DE3117837A1 (en) | 1980-05-16 | 1981-05-06 | Universal joint |
FR8109596A FR2482684A1 (en) | 1980-05-16 | 1981-05-14 | UNIVERSAL CROSSED JOINT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56005705A JPS57118665A (en) | 1981-01-16 | 1981-01-16 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57118665A true JPS57118665A (en) | 1982-07-23 |
Family
ID=11618521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56005705A Pending JPS57118665A (en) | 1980-05-16 | 1981-01-16 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57118665A (en) |
-
1981
- 1981-01-16 JP JP56005705A patent/JPS57118665A/en active Pending
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