JPS57206072A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57206072A
JPS57206072A JP8963881A JP8963881A JPS57206072A JP S57206072 A JPS57206072 A JP S57206072A JP 8963881 A JP8963881 A JP 8963881A JP 8963881 A JP8963881 A JP 8963881A JP S57206072 A JPS57206072 A JP S57206072A
Authority
JP
Japan
Prior art keywords
anode
layer
type conductive
layers
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8963881A
Other languages
Japanese (ja)
Inventor
Takahiro Nagano
Tsutomu Yao
Hiroshi Fukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8963881A priority Critical patent/JPS57206072A/en
Publication of JPS57206072A publication Critical patent/JPS57206072A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To restrict the increase of the main current in case of an incidental circuit trouble by a method wherein, inside an anode emitter layer, the anode collector layer which is inverse conductive to said emitter layer is provided so that the anode collector layer may be exposed to one side main surface coming into contact with the anode electrode. CONSTITUTION:A semicondcutor 100 is comprised of p type conductive anode emitter layer 2, n type conductive first base 3, p type conductive second base 4 and n type conductive cathode emitter layer 5 while the layer 2 is short circuited to the anode electrode 7 provided on the down side main surface by means of the n type conductive anode short circuiting layers 6, 60 exposed to the down side main surface at the high impurity concentration. Moreover the anode collector layers 61 and p type conductive third base layer 21 are formed inside the layer 2 while the n-p-n transistor is further formed by said layers 61, 21 and 3. Furthermore the control electrode 8 and the cathode electrode 9 are respectively provided on the layers 4 and 5.
JP8963881A 1981-06-12 1981-06-12 Semiconductor device Pending JPS57206072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8963881A JPS57206072A (en) 1981-06-12 1981-06-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8963881A JPS57206072A (en) 1981-06-12 1981-06-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57206072A true JPS57206072A (en) 1982-12-17

Family

ID=13976307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8963881A Pending JPS57206072A (en) 1981-06-12 1981-06-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57206072A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961099A (en) * 1988-02-12 1990-10-02 Asea Brown Boveri Ltd. High-power GTO thyristor and also a method for its manufacture
US5140179A (en) * 1990-07-18 1992-08-18 Sony Corporation Master-slave type flip-flop circuit
EP0687012A3 (en) * 1994-06-10 1996-02-07 Abb Management Ag Shorted anode structure for asymmetric thyristors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961099A (en) * 1988-02-12 1990-10-02 Asea Brown Boveri Ltd. High-power GTO thyristor and also a method for its manufacture
US5140179A (en) * 1990-07-18 1992-08-18 Sony Corporation Master-slave type flip-flop circuit
EP0687012A3 (en) * 1994-06-10 1996-02-07 Abb Management Ag Shorted anode structure for asymmetric thyristors

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