JPS57164565A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS57164565A JPS57164565A JP5009581A JP5009581A JPS57164565A JP S57164565 A JPS57164565 A JP S57164565A JP 5009581 A JP5009581 A JP 5009581A JP 5009581 A JP5009581 A JP 5009581A JP S57164565 A JPS57164565 A JP S57164565A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- base layer
- emitter
- emitter layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To obtain high gate sensitivity, large critical ON current increasing ratio and large critical OFF current increasing ratio without increasing gate current by adding a diffusion layer to a base layer. CONSTITUTION:A P type base layer 2 and a P type emitter layer 3 are formed on both sides of an N type substrate 1 and on the surface of the P type base layer 2, an N type emitter layer 4 is formed in such a manner that the P type base layer protrudes locally to the upper side of the emitter layer 4 through short circuit holes 8. Then an independent N<+> type impurity diffusion layer 9 which has ring-form and has no connection to other parts is formed between a control (gate) electrode 5 formed on the surface at the center of the base layer 2 and a ring-form emitter electrode 6 which makes short-circuit between the base layer, which is exposed on the surface through many short-circuit holes 8 which are formed on the surface of the N type emitter layer 4 and pierce the emitter layer locally, and the emitter layer 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5009581A JPS57164565A (en) | 1981-04-03 | 1981-04-03 | Thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5009581A JPS57164565A (en) | 1981-04-03 | 1981-04-03 | Thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57164565A true JPS57164565A (en) | 1982-10-09 |
Family
ID=12849493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5009581A Pending JPS57164565A (en) | 1981-04-03 | 1981-04-03 | Thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57164565A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60142531U (en) * | 1984-02-28 | 1985-09-20 | 株式会社明電舎 | Gate turn-off thyristor |
-
1981
- 1981-04-03 JP JP5009581A patent/JPS57164565A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60142531U (en) * | 1984-02-28 | 1985-09-20 | 株式会社明電舎 | Gate turn-off thyristor |
| JPH0448024Y2 (en) * | 1984-02-28 | 1992-11-12 |
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