JPS56104467A - Reverse conducting thyristor - Google Patents

Reverse conducting thyristor

Info

Publication number
JPS56104467A
JPS56104467A JP737080A JP737080A JPS56104467A JP S56104467 A JPS56104467 A JP S56104467A JP 737080 A JP737080 A JP 737080A JP 737080 A JP737080 A JP 737080A JP S56104467 A JPS56104467 A JP S56104467A
Authority
JP
Japan
Prior art keywords
region
type
thyristor
layer
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP737080A
Other languages
Japanese (ja)
Inventor
Yoshihito Amamiya
Takayuki Sugata
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP737080A priority Critical patent/JPS56104467A/en
Publication of JPS56104467A publication Critical patent/JPS56104467A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Abstract

PURPOSE:To reducing the voltage drop of a diode unit in the reverse conducting thyristor by forming a shallower P<+> type slender diffused region than an N type layer and deeper diffusion than N<+> type layer in the diode forming region of the thyristor and thus preventing the erroneous operation of the thyristor. CONSTITUTION:An N type layer 2, an N<+> type layer 3 and P<+> type regions L3, L5 are formed on one side surface of an N type semiconductor substrate 1, and a P type layer 4, a P<+> type layer 5 and an N<+> type region L4 are formed on the other side surface thereof. The thyristor unit ZT and the diode unit ZD are isolated via an isolating region ZS. The potential barrier for the holes flowing toward the electrode E3 from the layer 2 is lowered by providing the layer 5, and the voltage drop in the region ZD becomes low in the reverse conducting state. The current flowing as designated by an arrow IT becomes low in the region ZT, no unnecessary carrier is stored in the region ZT in the reverse conducting state, and the erroneous operation can be avoided.
JP737080A 1980-01-23 1980-01-23 Reverse conducting thyristor Pending JPS56104467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP737080A JPS56104467A (en) 1980-01-23 1980-01-23 Reverse conducting thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP737080A JPS56104467A (en) 1980-01-23 1980-01-23 Reverse conducting thyristor

Publications (1)

Publication Number Publication Date
JPS56104467A true JPS56104467A (en) 1981-08-20

Family

ID=11664078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP737080A Pending JPS56104467A (en) 1980-01-23 1980-01-23 Reverse conducting thyristor

Country Status (1)

Country Link
JP (1) JPS56104467A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028974A (en) * 1986-12-01 1991-07-02 Kabushiki Kaisha Toshiba Semiconductor switching device with anode shortening structure
JPH03174775A (en) * 1989-04-04 1991-07-29 Fuji Electric Co Ltd Reverse-conductivity type gate turn-off thyristor
FR2688941A1 (en) * 1992-03-20 1993-09-24 Sgs Thomson Microelectronics ALTERNATIVE VOLTAGE SWITCH TRIGGERED ON A SPECIFIED ALTERNATION AND PERIOD CONDUCTION.
EP0621643A1 (en) * 1993-03-25 1994-10-26 Mitsubishi Denki Kabushiki Kaisha Reverse conducting gate turn-off thyristor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504512A (en) * 1973-05-08 1975-01-17
JPS509153A (en) * 1973-05-29 1975-01-30
JPS5080087A (en) * 1973-11-12 1975-06-28
JPS5331980A (en) * 1976-09-03 1978-03-25 Bbc Brown Boveri & Cie Semiconductor element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504512A (en) * 1973-05-08 1975-01-17
JPS509153A (en) * 1973-05-29 1975-01-30
JPS5080087A (en) * 1973-11-12 1975-06-28
JPS5331980A (en) * 1976-09-03 1978-03-25 Bbc Brown Boveri & Cie Semiconductor element

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028974A (en) * 1986-12-01 1991-07-02 Kabushiki Kaisha Toshiba Semiconductor switching device with anode shortening structure
JPH03174775A (en) * 1989-04-04 1991-07-29 Fuji Electric Co Ltd Reverse-conductivity type gate turn-off thyristor
FR2688941A1 (en) * 1992-03-20 1993-09-24 Sgs Thomson Microelectronics ALTERNATIVE VOLTAGE SWITCH TRIGGERED ON A SPECIFIED ALTERNATION AND PERIOD CONDUCTION.
US5471074A (en) * 1992-03-20 1995-11-28 Sgs-Thomson Microelectronics S.A. A.c. switch triggered at a predetermined half-period
US5569940A (en) * 1992-03-20 1996-10-29 Sgs-Thomson Microelectronics S.A. AC switch triggered at a predetermined half-period
US5596292A (en) * 1992-03-20 1997-01-21 Sgs-Thomson Microelectronics S.A. A.C. switch triggered at a predetermined half-period
EP0621643A1 (en) * 1993-03-25 1994-10-26 Mitsubishi Denki Kabushiki Kaisha Reverse conducting gate turn-off thyristor

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