IE792474L - Switching device - Google Patents

Switching device

Info

Publication number
IE792474L
IE792474L IE792474A IE247479A IE792474L IE 792474 L IE792474 L IE 792474L IE 792474 A IE792474 A IE 792474A IE 247479 A IE247479 A IE 247479A IE 792474 L IE792474 L IE 792474L
Authority
IE
Ireland
Prior art keywords
type
region
semiconductor body
cathode
anode
Prior art date
Application number
IE792474A
Other versions
IE48892B1 (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IE792474L publication Critical patent/IE792474L/en
Publication of IE48892B1 publication Critical patent/IE48892B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Abstract

A high voltage solide-state switch, which allows alternating current or direct current operation and provides bidirectional blocking, consists of a first p-type semiconductor body (16) separated from a semiconductor substrate (12) by a dielectric layer (14) with a p+ type anode region (18), an n+ type cathode region (24) and an n+ type gate region (20) located on a common major surface of the semiconductor body. A second p type region (22) of higher impurity concentration than the semiconductor body encircles the cathode region. Separate low resistance electrical contacts are made to the anode, cathode, and gate regions. [GB2049283A]
IE2474/79A 1978-12-20 1979-12-19 Solid state switching device IE48892B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97202278A 1978-12-20 1978-12-20
US97202178A 1978-12-20 1978-12-20
US97205678A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
IE792474L true IE792474L (en) 1980-06-20
IE48892B1 IE48892B1 (en) 1985-06-12

Family

ID=27420763

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2474/79A IE48892B1 (en) 1978-12-20 1979-12-19 Solid state switching device

Country Status (18)

Country Link
JP (1) JPS6412106B2 (en)
KR (1) KR830002293B1 (en)
AU (1) AU529702B2 (en)
CH (1) CH659151A5 (en)
DD (1) DD147897A5 (en)
ES (1) ES487066A1 (en)
FR (1) FR2445026A1 (en)
GB (1) GB2049283B (en)
HU (1) HU181030B (en)
IE (1) IE48892B1 (en)
IL (1) IL58970A (en)
IN (1) IN153497B (en)
IT (1) IT1126603B (en)
NL (1) NL7920184A (en)
PL (1) PL220494A1 (en)
SE (1) SE446139B (en)
SG (1) SG32884G (en)
WO (1) WO1980001337A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
GB2113005B (en) * 1981-03-27 1985-05-09 Western Electric Co Gated diode switch
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (en) * 1966-12-19 1968-11-22 Lucas Industries Ltd Semiconductor diode
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
JPS4933432B1 (en) * 1968-12-20 1974-09-06
DE2102103A1 (en) * 1970-01-22 1971-07-29 Rca Corp Field effect controlled diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (en) * 1971-08-26 1973-03-01 Dionics Inc HIGH VOLTAGE P-N TRANSITION AND ITS APPLICATION IN SEMICONDUCTOR SWITCHING ELEMENTS, AND THE PROCESS FOR ITS MANUFACTURING
JPS5032942U (en) * 1973-07-23 1975-04-10
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same

Also Published As

Publication number Publication date
NL7920184A (en) 1980-10-31
GB2049283B (en) 1983-07-27
SE8005703L (en) 1980-08-13
GB2049283A (en) 1980-12-17
IE48892B1 (en) 1985-06-12
AU5386679A (en) 1980-06-26
DD147897A5 (en) 1981-04-22
PL220494A1 (en) 1980-09-08
SE446139B (en) 1986-08-11
KR830001743A (en) 1983-05-18
CH659151A5 (en) 1986-12-31
IN153497B (en) 1984-07-21
IL58970A0 (en) 1980-03-31
IT7928206A0 (en) 1979-12-19
JPS6412106B2 (en) 1989-02-28
IL58970A (en) 1982-07-30
KR830002293B1 (en) 1983-10-21
WO1980001337A1 (en) 1980-06-26
IT1126603B (en) 1986-05-21
AU529702B2 (en) 1983-06-16
ES487066A1 (en) 1980-09-16
SG32884G (en) 1985-02-08
JPS55501079A (en) 1980-12-04
FR2445026A1 (en) 1980-07-18
HU181030B (en) 1983-05-30
FR2445026B1 (en) 1983-08-19

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Legal Events

Date Code Title Description
MM4A Patent lapsed