JPS4933432B1 - - Google Patents

Info

Publication number
JPS4933432B1
JPS4933432B1 JP43093347A JP9334768A JPS4933432B1 JP S4933432 B1 JPS4933432 B1 JP S4933432B1 JP 43093347 A JP43093347 A JP 43093347A JP 9334768 A JP9334768 A JP 9334768A JP S4933432 B1 JPS4933432 B1 JP S4933432B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43093347A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP43093347A priority Critical patent/JPS4933432B1/ja
Priority to US885388A priority patent/US3657616A/en
Priority to GB61295/69A priority patent/GB1285748A/en
Priority to FR6944185A priority patent/FR2041027B1/fr
Publication of JPS4933432B1 publication Critical patent/JPS4933432B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP43093347A 1968-12-20 1968-12-20 Pending JPS4933432B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP43093347A JPS4933432B1 (en) 1968-12-20 1968-12-20
US885388A US3657616A (en) 1968-12-20 1969-12-15 Semiconductor switching element
GB61295/69A GB1285748A (en) 1968-12-20 1969-12-16 A semiconductor switching element and a semiconductor switching device involving the same
FR6944185A FR2041027B1 (en) 1968-12-20 1969-12-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43093347A JPS4933432B1 (en) 1968-12-20 1968-12-20

Publications (1)

Publication Number Publication Date
JPS4933432B1 true JPS4933432B1 (en) 1974-09-06

Family

ID=14079721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43093347A Pending JPS4933432B1 (en) 1968-12-20 1968-12-20

Country Status (4)

Country Link
US (1) US3657616A (en)
JP (1) JPS4933432B1 (en)
FR (1) FR2041027B1 (en)
GB (1) GB1285748A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3811074A (en) * 1971-04-10 1974-05-14 Nippon Telegraph & Telephone Semiconductor device and apparatus using the same
JPS5233405A (en) * 1975-09-10 1977-03-14 Oki Electric Ind Co Ltd Semiconductor device
US4608590A (en) * 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
GB2049283B (en) * 1978-12-20 1983-07-27 Western Electric Co High voltage dielectrically isolated solid-state switch
US4602268A (en) * 1978-12-20 1986-07-22 At&T Bell Laboratories High voltage dielectrically isolated dual gate solid-state switch
CA1131800A (en) * 1978-12-20 1982-09-14 Bernard T. Murphy High voltage junction solid-state switch
EP0075589B1 (en) * 1981-03-27 1987-01-14 Western Electric Company, Incorporated Gated diode switch
FR2550890B1 (en) * 1983-08-17 1985-10-11 Thomson Csf HIGH FREQUENCY ELECTRIC SIGNAL SWITCHING MATRIX

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2832898A (en) * 1954-07-12 1958-04-29 Rca Corp Time delay transistor trigger circuit
NL213944A (en) * 1956-01-23
GB1076919A (en) * 1966-06-03 1967-07-26 Ibm Improvements in digital data stores
US3436617A (en) * 1966-09-01 1969-04-01 Motorola Inc Semiconductor device

Also Published As

Publication number Publication date
GB1285748A (en) 1972-08-16
FR2041027A1 (en) 1971-01-29
FR2041027B1 (en) 1974-03-15
US3657616A (en) 1972-04-18

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