GB1076919A - Improvements in digital data stores - Google Patents
Improvements in digital data storesInfo
- Publication number
- GB1076919A GB1076919A GB24732/66A GB2473266A GB1076919A GB 1076919 A GB1076919 A GB 1076919A GB 24732/66 A GB24732/66 A GB 24732/66A GB 2473266 A GB2473266 A GB 2473266A GB 1076919 A GB1076919 A GB 1076919A
- Authority
- GB
- United Kingdom
- Prior art keywords
- contacts
- type
- base region
- emitter
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 abstract 2
- 238000003491 array Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 210000000352 storage cell Anatomy 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
- H03K3/351—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being unijunction transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
1,076,919. Unijunction transistor arrays. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 3, 1966, No. 24732/66. Heading H1K. [Also in Division G4] A digital data store comprises a semiconductor slice at least one face of which is of a first conductivity type, with a high conductivity base region of said first type formed at said face to define a plurality of discrete areas of the first type arranged in rows and columns, and an emitter of the opposite conductivity type and a high conductivity second base region of the first type formed in each area so as to constitute with the area-defining base region a unijunction transistor storage cell. In the embodiment annular P-type emitter regions each with a radial resistive extension are first formed in an N-type body or epitaxial layer on an insulating or P-type substrate by planar diffusion techniques. The base regions are next formed by the same technique after which contacts are deposited through apertures in oxide masking. These consist of segmental contacts 10a, 10b (Fig. 5) to the emitter, contacts 7 to the remote ends of the resistive extensions, and a pair of contacts 9a, 9b to each second base region. The contacts 7 of each row are then interconnected by a deposited conductive strip extending between the pairs of contacts 9, 10 and the second base regions of each column interconnected by a continuous strip or by a series of strips joining the nearest contacts on adjacent second base regions (Fig. 6, not shown).
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB24732/66A GB1076919A (en) | 1966-06-03 | 1966-06-03 | Improvements in digital data stores |
FR8469A FR1521035A (en) | 1966-06-03 | 1967-04-25 | Uni-junction transistor storage cell |
NL6707403A NL6707403A (en) | 1966-06-03 | 1967-05-29 | |
DE1524792A DE1524792C3 (en) | 1966-06-03 | 1967-06-01 | Erasable solid-state memory for binary data |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB24732/66A GB1076919A (en) | 1966-06-03 | 1966-06-03 | Improvements in digital data stores |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1076919A true GB1076919A (en) | 1967-07-26 |
Family
ID=10216380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB24732/66A Expired GB1076919A (en) | 1966-06-03 | 1966-06-03 | Improvements in digital data stores |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE1524792C3 (en) |
FR (1) | FR1521035A (en) |
GB (1) | GB1076919A (en) |
NL (1) | NL6707403A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2005577A1 (en) * | 1968-04-04 | 1969-12-12 | Philips Nv | |
FR2041027A1 (en) * | 1968-12-20 | 1971-01-29 | Nippon Telegraph & Telephone |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1599230A (en) * | 1977-08-26 | 1981-09-30 | Gen Electric | Unijunction transistors |
-
1966
- 1966-06-03 GB GB24732/66A patent/GB1076919A/en not_active Expired
-
1967
- 1967-04-25 FR FR8469A patent/FR1521035A/en not_active Expired
- 1967-05-29 NL NL6707403A patent/NL6707403A/xx unknown
- 1967-06-01 DE DE1524792A patent/DE1524792C3/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2005577A1 (en) * | 1968-04-04 | 1969-12-12 | Philips Nv | |
FR2041027A1 (en) * | 1968-12-20 | 1971-01-29 | Nippon Telegraph & Telephone |
Also Published As
Publication number | Publication date |
---|---|
NL6707403A (en) | 1967-12-04 |
FR1521035A (en) | 1968-04-12 |
DE1524792A1 (en) | 1972-04-20 |
DE1524792C3 (en) | 1973-09-13 |
DE1524792B2 (en) | 1973-02-22 |
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