GB1076919A - Improvements in digital data stores - Google Patents

Improvements in digital data stores

Info

Publication number
GB1076919A
GB1076919A GB24732/66A GB2473266A GB1076919A GB 1076919 A GB1076919 A GB 1076919A GB 24732/66 A GB24732/66 A GB 24732/66A GB 2473266 A GB2473266 A GB 2473266A GB 1076919 A GB1076919 A GB 1076919A
Authority
GB
United Kingdom
Prior art keywords
contacts
type
base region
emitter
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24732/66A
Inventor
John Brian Gillett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to GB24732/66A priority Critical patent/GB1076919A/en
Priority to FR8469A priority patent/FR1521035A/en
Priority to NL6707403A priority patent/NL6707403A/xx
Priority to DE1524792A priority patent/DE1524792C3/en
Publication of GB1076919A publication Critical patent/GB1076919A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H03K3/351Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being unijunction transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

1,076,919. Unijunction transistor arrays. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 3, 1966, No. 24732/66. Heading H1K. [Also in Division G4] A digital data store comprises a semiconductor slice at least one face of which is of a first conductivity type, with a high conductivity base region of said first type formed at said face to define a plurality of discrete areas of the first type arranged in rows and columns, and an emitter of the opposite conductivity type and a high conductivity second base region of the first type formed in each area so as to constitute with the area-defining base region a unijunction transistor storage cell. In the embodiment annular P-type emitter regions each with a radial resistive extension are first formed in an N-type body or epitaxial layer on an insulating or P-type substrate by planar diffusion techniques. The base regions are next formed by the same technique after which contacts are deposited through apertures in oxide masking. These consist of segmental contacts 10a, 10b (Fig. 5) to the emitter, contacts 7 to the remote ends of the resistive extensions, and a pair of contacts 9a, 9b to each second base region. The contacts 7 of each row are then interconnected by a deposited conductive strip extending between the pairs of contacts 9, 10 and the second base regions of each column interconnected by a continuous strip or by a series of strips joining the nearest contacts on adjacent second base regions (Fig. 6, not shown).
GB24732/66A 1966-06-03 1966-06-03 Improvements in digital data stores Expired GB1076919A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB24732/66A GB1076919A (en) 1966-06-03 1966-06-03 Improvements in digital data stores
FR8469A FR1521035A (en) 1966-06-03 1967-04-25 Uni-junction transistor storage cell
NL6707403A NL6707403A (en) 1966-06-03 1967-05-29
DE1524792A DE1524792C3 (en) 1966-06-03 1967-06-01 Erasable solid-state memory for binary data

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB24732/66A GB1076919A (en) 1966-06-03 1966-06-03 Improvements in digital data stores

Publications (1)

Publication Number Publication Date
GB1076919A true GB1076919A (en) 1967-07-26

Family

ID=10216380

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24732/66A Expired GB1076919A (en) 1966-06-03 1966-06-03 Improvements in digital data stores

Country Status (4)

Country Link
DE (1) DE1524792C3 (en)
FR (1) FR1521035A (en)
GB (1) GB1076919A (en)
NL (1) NL6707403A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2005577A1 (en) * 1968-04-04 1969-12-12 Philips Nv
FR2041027A1 (en) * 1968-12-20 1971-01-29 Nippon Telegraph & Telephone

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1599230A (en) * 1977-08-26 1981-09-30 Gen Electric Unijunction transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2005577A1 (en) * 1968-04-04 1969-12-12 Philips Nv
FR2041027A1 (en) * 1968-12-20 1971-01-29 Nippon Telegraph & Telephone

Also Published As

Publication number Publication date
NL6707403A (en) 1967-12-04
FR1521035A (en) 1968-04-12
DE1524792A1 (en) 1972-04-20
DE1524792C3 (en) 1973-09-13
DE1524792B2 (en) 1973-02-22

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