IE802604L - Solid state switching device - Google Patents

Solid state switching device

Info

Publication number
IE802604L
IE802604L IE802604A IE260480A IE802604L IE 802604 L IE802604 L IE 802604L IE 802604 A IE802604 A IE 802604A IE 260480 A IE260480 A IE 260480A IE 802604 L IE802604 L IE 802604L
Authority
IE
Ireland
Prior art keywords
region
gate region
type
anode
cathode
Prior art date
Application number
IE802604A
Other versions
IE50697B1 (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IE802604L publication Critical patent/IE802604L/en
Publication of IE50697B1 publication Critical patent/IE50697B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)

Abstract

Hartman-16 HIGH VOLTAGE SOLID-STATE SWITCH A high voltage solid-state switch utilizes a dielectrically isolated lightly doped n type semiconductor body with a heavily doped p type anode region, a heavily doped n type first gate region, a moderately doped p type second gate region, and a heavily doped n type cathode region. The second gate region surrounds the cathode region. The first gate region is located directly between the anode region and the second gate region. The doping levels of the regions and the location of the first gate region between the anode and cathode regions facilitates a current break feature of the switch. [CA1145057A]
IE2604/80A 1979-12-28 1980-12-12 High-voltage solid-state switch IE50697B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10777579A 1979-12-28 1979-12-28

Publications (2)

Publication Number Publication Date
IE802604L true IE802604L (en) 1981-06-28
IE50697B1 IE50697B1 (en) 1986-06-25

Family

ID=22318408

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2604/80A IE50697B1 (en) 1979-12-28 1980-12-12 High-voltage solid-state switch

Country Status (21)

Country Link
JP (1) JPS56103467A (en)
KR (1) KR840002413B1 (en)
AU (1) AU534874B2 (en)
BE (1) BE886821A (en)
CA (1) CA1145057A (en)
CH (1) CH652863A5 (en)
DD (1) DD156039A5 (en)
DE (1) DE3048702A1 (en)
DK (1) DK549780A (en)
ES (1) ES498097A0 (en)
FR (1) FR2473790A1 (en)
GB (1) GB2066569B (en)
HK (1) HK69684A (en)
HU (1) HU181246B (en)
IE (1) IE50697B1 (en)
IL (1) IL61780A (en)
IT (1) IT1134896B (en)
NL (1) NL8007051A (en)
PL (1) PL228665A1 (en)
SE (1) SE453621B (en)
SG (1) SG35184G (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
US4573065A (en) * 1982-12-10 1986-02-25 At&T Bell Laboratories Radial high voltage switch structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1039915A (en) * 1964-05-25 1966-08-24 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE2102103A1 (en) * 1970-01-22 1971-07-29 Rca Corp Field effect controlled diode
JPS5135114B1 (en) * 1970-12-28 1976-09-30
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
DE2133430A1 (en) * 1971-07-05 1973-01-18 Siemens Ag PLANAR FOUR-LAYER DIODE
DE2241600A1 (en) * 1971-08-26 1973-03-01 Dionics Inc HIGH VOLTAGE P-N TRANSITION AND ITS APPLICATION IN SEMICONDUCTOR SWITCHING ELEMENTS, AND THE PROCESS FOR ITS MANUFACTURING
JPS5032942U (en) * 1973-07-23 1975-04-10
JPS5210061A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Thyristor circuit
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
JPS5412682A (en) * 1977-06-30 1979-01-30 Nec Corp Thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes
CH659151A5 (en) * 1978-12-20 1986-12-31 Western Electric Co FIXED BODY SWITCH WITH A SEMICONDUCTOR BODY AND CIRCUIT ARRANGEMENT WITH AT LEAST TWO FIXED BODY SWITCHES.

Also Published As

Publication number Publication date
IL61780A (en) 1983-07-31
SE8008851L (en) 1981-06-29
CH652863A5 (en) 1985-11-29
CA1145057A (en) 1983-04-19
FR2473790B1 (en) 1985-03-08
HU181246B (en) 1983-06-28
ES8201376A1 (en) 1981-12-16
AU6544980A (en) 1981-07-02
IT1134896B (en) 1986-08-20
NL8007051A (en) 1981-07-16
IE50697B1 (en) 1986-06-25
SG35184G (en) 1985-02-08
IT8026947A0 (en) 1980-12-24
GB2066569B (en) 1983-09-14
KR830004678A (en) 1983-07-16
DK549780A (en) 1981-06-29
KR840002413B1 (en) 1984-12-27
IL61780A0 (en) 1981-01-30
FR2473790A1 (en) 1981-07-17
PL228665A1 (en) 1981-09-04
JPS56103467A (en) 1981-08-18
SE453621B (en) 1988-02-15
ES498097A0 (en) 1981-12-16
AU534874B2 (en) 1984-02-16
HK69684A (en) 1984-09-14
DE3048702A1 (en) 1981-09-10
DD156039A5 (en) 1982-07-21
BE886821A (en) 1981-04-16
GB2066569A (en) 1981-07-08

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