JPS5412682A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5412682A
JPS5412682A JP7855277A JP7855277A JPS5412682A JP S5412682 A JPS5412682 A JP S5412682A JP 7855277 A JP7855277 A JP 7855277A JP 7855277 A JP7855277 A JP 7855277A JP S5412682 A JPS5412682 A JP S5412682A
Authority
JP
Japan
Prior art keywords
thyristor
junction
ensure
given
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7855277A
Other languages
Japanese (ja)
Other versions
JPS6212669B2 (en
Inventor
Teruo Kusaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7855277A priority Critical patent/JPS5412682A/en
Publication of JPS5412682A publication Critical patent/JPS5412682A/en
Publication of JPS6212669B2 publication Critical patent/JPS6212669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To ensure a steady operation for the thyristor by providing a field effect electrode on the junction to be given a forward bias of the thyristor which contains pn junctions biased forward and backward respectively on the substrate surface.
JP7855277A 1977-06-30 1977-06-30 Thyristor Granted JPS5412682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7855277A JPS5412682A (en) 1977-06-30 1977-06-30 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7855277A JPS5412682A (en) 1977-06-30 1977-06-30 Thyristor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP29908187A Division JPS63177468A (en) 1987-11-27 1987-11-27 Thyristor

Publications (2)

Publication Number Publication Date
JPS5412682A true JPS5412682A (en) 1979-01-30
JPS6212669B2 JPS6212669B2 (en) 1987-03-19

Family

ID=13665072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7855277A Granted JPS5412682A (en) 1977-06-30 1977-06-30 Thyristor

Country Status (1)

Country Link
JP (1) JPS5412682A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103467A (en) * 1979-12-28 1981-08-18 Western Electric Co High voltage solid state switching device
JPS5981210A (en) * 1982-09-14 1984-05-10 ウニオン・アクチエンゲゼルシヤフト・ケツテンフアブリーク Antiskid net combining tire protection of car and its manufacture
JPS59151463A (en) * 1982-12-21 1984-08-29 インタ−ナシヨナル・レクチフアイヤ−・コ−ポレ−シヨン Solid ac relay and light firing thyristor
JPS60259508A (en) * 1984-03-16 1985-12-21 ルド・ケツテンフアブリ−ク・リ−ゲル・ウント・デイ−ツ・ゲ−・エム・ベ−・ハ−・ウント・ツエ−・オ− Tire chain
JPS61102064A (en) * 1984-10-25 1986-05-20 Nec Corp Lateral type p-n-p-n element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103467A (en) * 1979-12-28 1981-08-18 Western Electric Co High voltage solid state switching device
JPS5981210A (en) * 1982-09-14 1984-05-10 ウニオン・アクチエンゲゼルシヤフト・ケツテンフアブリーク Antiskid net combining tire protection of car and its manufacture
JPH0330521B2 (en) * 1982-09-14 1991-04-30
JPS59151463A (en) * 1982-12-21 1984-08-29 インタ−ナシヨナル・レクチフアイヤ−・コ−ポレ−シヨン Solid ac relay and light firing thyristor
JPS60259508A (en) * 1984-03-16 1985-12-21 ルド・ケツテンフアブリ−ク・リ−ゲル・ウント・デイ−ツ・ゲ−・エム・ベ−・ハ−・ウント・ツエ−・オ− Tire chain
JPS61102064A (en) * 1984-10-25 1986-05-20 Nec Corp Lateral type p-n-p-n element

Also Published As

Publication number Publication date
JPS6212669B2 (en) 1987-03-19

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