JPS5387183A - Planar type semiconductor device - Google Patents

Planar type semiconductor device

Info

Publication number
JPS5387183A
JPS5387183A JP180077A JP180077A JPS5387183A JP S5387183 A JPS5387183 A JP S5387183A JP 180077 A JP180077 A JP 180077A JP 180077 A JP180077 A JP 180077A JP S5387183 A JPS5387183 A JP S5387183A
Authority
JP
Japan
Prior art keywords
planar type
semiconductor device
type semiconductor
junctions
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP180077A
Other languages
Japanese (ja)
Inventor
Susumu Murakami
Yoshikazu Hosokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP180077A priority Critical patent/JPS5387183A/en
Publication of JPS5387183A publication Critical patent/JPS5387183A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors

Abstract

PURPOSE:To obtain a planar type device of superior reverse characteristics by forming a surface region of a relatively high concentration on the surface portion of a relatively low impurity concentration adjoining to pn junctions.
JP180077A 1977-01-11 1977-01-11 Planar type semiconductor device Pending JPS5387183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP180077A JPS5387183A (en) 1977-01-11 1977-01-11 Planar type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP180077A JPS5387183A (en) 1977-01-11 1977-01-11 Planar type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5387183A true JPS5387183A (en) 1978-08-01

Family

ID=11511640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP180077A Pending JPS5387183A (en) 1977-01-11 1977-01-11 Planar type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5387183A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556657A (en) * 1978-10-23 1980-04-25 Nec Kyushu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556657A (en) * 1978-10-23 1980-04-25 Nec Kyushu Ltd Semiconductor device

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