JPS53134374A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53134374A
JPS53134374A JP4938577A JP4938577A JPS53134374A JP S53134374 A JPS53134374 A JP S53134374A JP 4938577 A JP4938577 A JP 4938577A JP 4938577 A JP4938577 A JP 4938577A JP S53134374 A JPS53134374 A JP S53134374A
Authority
JP
Japan
Prior art keywords
semiconductor device
region
collector
phenomenon
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4938577A
Other languages
Japanese (ja)
Inventor
Hideo Asahina
Hajime Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP4938577A priority Critical patent/JPS53134374A/en
Publication of JPS53134374A publication Critical patent/JPS53134374A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To avoid punch-through phenomenon, by forming the region having comparatively higher impurity concentration to the part in contact with the first region of the first conduction type being the collector.
JP4938577A 1977-04-28 1977-04-28 Semiconductor device Pending JPS53134374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4938577A JPS53134374A (en) 1977-04-28 1977-04-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4938577A JPS53134374A (en) 1977-04-28 1977-04-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS53134374A true JPS53134374A (en) 1978-11-22

Family

ID=12829542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4938577A Pending JPS53134374A (en) 1977-04-28 1977-04-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53134374A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892264A (en) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp Manufacture of semiconductor integrated circuit device
JPS58182260A (en) * 1982-04-19 1983-10-25 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS58212159A (en) * 1982-06-02 1983-12-09 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS58212156A (en) * 1982-06-02 1983-12-09 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS60765A (en) * 1983-06-16 1985-01-05 Matsushita Electric Ind Co Ltd Bi-polar integrated circuit device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892264A (en) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp Manufacture of semiconductor integrated circuit device
JPH0138378B2 (en) * 1981-11-27 1989-08-14 Mitsubishi Electric Corp
JPS58182260A (en) * 1982-04-19 1983-10-25 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPH0561775B2 (en) * 1982-04-19 1993-09-07 Matsushita Electric Ind Co Ltd
JPS58212159A (en) * 1982-06-02 1983-12-09 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS58212156A (en) * 1982-06-02 1983-12-09 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS6334627B2 (en) * 1982-06-02 1988-07-11 Matsushita Electric Ind Co Ltd
JPH0315349B2 (en) * 1982-06-02 1991-02-28 Matsushita Electric Ind Co Ltd
JPS60765A (en) * 1983-06-16 1985-01-05 Matsushita Electric Ind Co Ltd Bi-polar integrated circuit device
JPH0426222B2 (en) * 1983-06-16 1992-05-06 Matsushita Electric Ind Co Ltd

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