JPS53106589A - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

Info

Publication number
JPS53106589A
JPS53106589A JP2135477A JP2135477A JPS53106589A JP S53106589 A JPS53106589 A JP S53106589A JP 2135477 A JP2135477 A JP 2135477A JP 2135477 A JP2135477 A JP 2135477A JP S53106589 A JPS53106589 A JP S53106589A
Authority
JP
Japan
Prior art keywords
detector
radiation detector
semiconductor radiation
output
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2135477A
Other languages
Japanese (ja)
Inventor
Noboru Matsuo
Tetsuji Kobayashi
Toru Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2135477A priority Critical patent/JPS53106589A/en
Publication of JPS53106589A publication Critical patent/JPS53106589A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To perform temperature compensation by integrally combining a first radiation detector which has a rectifer junction layer on one of the surfaces and an ohmic contact layer on the other surface and a second radiation detector which is exactly the same in material, shape and size as said detector and is covered with a radiation shield material, and controlling the output of the first detector by the output of the second detector.
JP2135477A 1977-02-28 1977-02-28 Semiconductor radiation detector Pending JPS53106589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2135477A JPS53106589A (en) 1977-02-28 1977-02-28 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2135477A JPS53106589A (en) 1977-02-28 1977-02-28 Semiconductor radiation detector

Publications (1)

Publication Number Publication Date
JPS53106589A true JPS53106589A (en) 1978-09-16

Family

ID=12052753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2135477A Pending JPS53106589A (en) 1977-02-28 1977-02-28 Semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS53106589A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011128046A (en) * 2009-12-18 2011-06-30 Yokogawa Electric Corp Radiation detection device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011128046A (en) * 2009-12-18 2011-06-30 Yokogawa Electric Corp Radiation detection device

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