JPS52100982A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52100982A
JPS52100982A JP1774276A JP1774276A JPS52100982A JP S52100982 A JPS52100982 A JP S52100982A JP 1774276 A JP1774276 A JP 1774276A JP 1774276 A JP1774276 A JP 1774276A JP S52100982 A JPS52100982 A JP S52100982A
Authority
JP
Japan
Prior art keywords
semiconductor device
emiconductor
structured
light
wave length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1774276A
Other languages
Japanese (ja)
Other versions
JPS5626983B2 (en
Inventor
Osamu Tomizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1774276A priority Critical patent/JPS52100982A/en
Publication of JPS52100982A publication Critical patent/JPS52100982A/en
Publication of JPS5626983B2 publication Critical patent/JPS5626983B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To obtain efficient I2L structured emiconductor element by increasing transparency of radiation ray or light at wave length region corresponding to energy gap of semiconductor region by decreasing thickness of semiconductor layer.
COPYRIGHT: (C)1977,JPO&Japio
JP1774276A 1976-02-20 1976-02-20 Semiconductor device Granted JPS52100982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1774276A JPS52100982A (en) 1976-02-20 1976-02-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1774276A JPS52100982A (en) 1976-02-20 1976-02-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS52100982A true JPS52100982A (en) 1977-08-24
JPS5626983B2 JPS5626983B2 (en) 1981-06-22

Family

ID=11952192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1774276A Granted JPS52100982A (en) 1976-02-20 1976-02-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52100982A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522825A (en) * 1978-08-04 1980-02-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo detection device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183793U (en) * 1981-05-19 1982-11-20
JPS62114756U (en) * 1986-01-10 1987-07-21
JPH02104675U (en) * 1989-02-06 1990-08-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522825A (en) * 1978-08-04 1980-02-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo detection device

Also Published As

Publication number Publication date
JPS5626983B2 (en) 1981-06-22

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